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Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb

  • Electronic and Optical Properties of Semiconductors
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Abstract

The results of detailed study of the magnetotransport properties of broken-gap type II heterojunctions in a GaInAsSb/InAs(GaSb) system are reported. An electron channel with a high charge-carrier mobility (as high as 50000–60000 cm2/(V s)) is observed and studied for the first time in an isotype broken-gap p-GaInAsSb/p-InAs heterostructure. The effects of electron-channel depletion and semimetal-semiconductor transition in the case of heavy doping of the quaternary alloy with acceptors are studied. Magnetotransport properties at temperatures of 4.2–200 K are studied in detail. Data on the energy spectrum and parameters of two-dimensional charge carriers at the heteroboundary are obtained. It is ascertained experimentally that, depending on the composition, either staggered (at x = 0.85) or broken-gap (at x = 0.95) heterojunctions can be formed in the Ga1−x InxAsySb1−y /GaSb, which is confirmed by theoretical calculations. The anomalous Hall effect and negative magnetoresistance were observed in GaInAsSb/InAs:Mn grown on substrates doped heavily with Mn magnetic acceptor impurity so that the hole concentration was as high as p > 5 × 1018 cm−3; these phenomena are caused by exchange interaction of Mn ions in InAs with high-mobility charge carriers in the electron channel at the heterointerface.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    T. I. Voronina, T. S. Lagunova, M. P. Mikhaĭlova, K. D. Moiseev, A. F. Lipaev & Yu. P. Yakovlev

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  1. T. I. Voronina
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  2. T. S. Lagunova
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  3. M. P. Mikhaĭlova
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  4. K. D. Moiseev
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  5. A. F. Lipaev
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  6. Yu. P. Yakovlev
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Original Russian Text © T.I. Voronina, T.S. Lagunova, M.P. Mikhaĭlova, K.D. Moiseev, A.F. Lipaev, Yu.P. Yakovlev, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 519–535.

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Voronina, T.I., Lagunova, T.S., Mikhaĭlova, M.P. et al. Magnetotransport properties of type II heterojunctions based on GaInAsSb/InAs and GaInAsSb/GaSb. Semiconductors 40, 503–520 (2006). https://doi.org/10.1134/S1063782606050022

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  • DOI: https://doi.org/10.1134/S1063782606050022

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