Abstract
GaN-based structures with InGaN quantum dots in the active region, which emit in the blue and green spectral ranges, are studied. The structures grown by both the conventional method and with the use of special procedures of the growth of the active region were compared. The use of these special growth modes stimulates the activated phase decomposition, which leads to the formation of quantum dots with substantially larger localization depth of electrons. It is shown that the formation of such deep quantum dots, like the formation of larger inhomogeneities of the active region, substantially suppresses the lateral carrier transport. This effect improves the characteristics of light-emitting diode structures at a low injection level and increases the temperature stability of quantum efficiency.
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Original Russian Text © V.S. Sizov, D.S. Sizov, G.A. Mikhailovskiĭ, E.E. Zavarin, V.V. Lundin, A.F. Tsatsul’nikov, N.N. Ledentsov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 589–596.
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Sizov, V.S., Sizov, D.S., Mikhailovskiĭ, G.A. et al. The study of lateral carrier transport in structures with InGaN quantum dots in the active region. Semiconductors 40, 574–580 (2006). https://doi.org/10.1134/S1063782606050113
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DOI: https://doi.org/10.1134/S1063782606050113