Abstract
Photoluminescence of a structure based on GaAs with δ-doped n-type layers is studied experimentally at 77 K in the context of a previously suggested spectral-correlative method for investigating semiconductor structures with laterally nonuniform layers. This method makes it possible to study (for the same sample) the features of the observed multicomponent photoluminescence spectrum in relation to two parameters, i.e., the distance between the δ-doped layers and the width of a narrow InGaAs quantum well located between these layers. The results obtained make it possible to relate the observed exponential increase in the intensity of photoluminescence from the region of δ-doped layers as these parameters are varied to the variation in the ratio between the concentration of the holes laterally localized in the minimums of the fluctuation potential and that of free two-dimensional holes. An effect of stabilization of the energy position of the photoluminescence spectral lines is observed; this effect is related to the localization of holes in the potential well between the δ-doped layers. The experimental data obtained are consistent with the results of our numerical calculations.
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Original Russian Text © Yu.V. Khabarov, V.V. Kapaev, V.A. Petrov, G.B. Galiev, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 572–583.
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Khabarov, Y.V., Kapaev, V.V., Petrov, V.A. et al. Studies of physical phenomena in semiconductor nanostructures using samples with laterally nonuniform layers. Photoluminescence of structures with n-type δ-doped layers. Semiconductors 40, 558–569 (2006). https://doi.org/10.1134/S1063782606050095
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DOI: https://doi.org/10.1134/S1063782606050095