Abstract
Some aspects of the problem of metal-insulator electronic phase transitions in semiconductors, which were not adequately studied previously, are examined in this paper. The issues considered are the effect of the hybridization between the resonance quasi-bound impurity states and the band continuum states on the transition, the effect of the uniform pressure on the nature of the transition, specific features of the metal-insulator transormation in the system of hydrogen-like impurities in the intermediate doping region in lightly doped narrow-gap and wide-gap semiconductors, and Anderson localization in heavily doped semiconductors. Minimum metallic conductivities under the conditions of Mott and Anderson transitions in p-CdSnAs2:Cu are determined. Phase diagrams are discussed.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
I. M. Tsidil’kovskiĭ, Zero-Gap Semiconductors as a New Class of Materials (Nauka, Moscow, 1986) [in Russian].
F. P. Kesamanly, Yu. M. Burdukov, F. M. Gashimzade, and Yu. A. Gol’dberg, Gallium Arsenide: Production, Properties, and Applications, Ed. by F. P. Kesamanly and D. N. Nasledov (Nauka, Moscow, 1973) [in Russian].
V. L. Bonch-Bruevich and S. G. Kalashnikov, Physics of Semiconductors (Nauka, Moscow, 1977) [in Russian].
D. N. Bychkovskiĭ, O. V. Konstantinov, and B. V. Tsarenkov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 29, 152 (1995) [Semiconductors 29, 80 (1995)].
A. G. Zabrodskiĭ, S. A. Nemov, and Yu. I. Ravich, Electronic Properties of Disordered Systems (Nauka, St. Petersburg, 2000) [in Russian].
N. A. Poklonskiĭ, S. A. Vyrko, and A. G. Zabrodskiĭ, Fiz. Tverd. Tela (St. Petersburg) 46, 1071 (2004) [Phys. Solid State 46, 1101 (2004)].
I. K. Kamilov, M. I. Daunov, V. A. Elizarov, and A. B. Magomedov, Zh. Éksp. Teor. Fiz. 104, 2436 (1993) [JETP 77, 92 (1993)].
M. I. Daunov, I. K. Kamilov, and A. B. Magomedov, Phys. Status Solidi B 211, 553 (1999).
M. I. Daunov, I. K. Kamilov, V. A. Elizarov, et al., Dokl. Akad. Nauk 357, 612 (1997) [Phys. Dokl. 42, 530 (1997)].
M. I. Daunov, I. K. Kamilov, A. B. Magomedov, and A. Sh. Kirakosyan, Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 36 (1999) [Semiconductors 33, 31 (1999)].
V. V. Popov, M. L. Shubnikov, S. S. Shalyt, and V. V. Kosarev, Fiz. Tekh. Poluprovodn. (Leningrad) 11, 1914 (1977) [Sov. Phys. Semicond. 11, 1120 (1977)].
M. I. Daunov, I. K. Kamilov, and S. F. Gabibov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 58 (2001) [Semiconductors 35, 59 (2001)].
I. K. Kamilov, M. I. Daunov, V. A. Elizarov, and A. B. Magomedov, Pis’ma Zh. Éksp. Teor. Fiz. 54, 589 (1991) [JETP Lett. 54, 594 (1991)].
B. I. Shklovskiĭ and A. L. Éfros, Electronic Properties of Doped Semiconductors (Nauka, Moscow, 1979; Springer, New York, 1984).
M. I. Daunov, A. B. Magomedov, and A. E. Ramazanova, Fiz. Tekh. Poluprovodn. (Leningrad) 19, 936 (1985) [Sov. Phys. Semicond. 19, 577 (1985)].
M. I. Daunov, A. B. Magomedov, and A. E. Ramazanova, Izv. Vyssh. Uchebn. Zaved., Fiz., No. 8, 98 (1986).
R. K. Arslanov, M. M. Gadzhialiev, M. I. Daunov, et al., Fiz. Tekh. Vys. Davleniĭ 15(2), 56 (2005).
O. V. Emel’yanenko, T. S. Lagunova, D. N. Nasledov, and G. N. Talalakin, Fiz. Tverd. Tela (Leningrad) 7, 1315 (1965) [Sov. Phys. Solid State 7, 1063 (1965)].
O. V. Emel’yanenko, T. S. Lagunova, and D. N. Nasledov, Fiz. Tverd. Tela (Leningrad) 3, 198 (1961) [Sov. Phys. Solid State 3, 144 (1961)].
H. Fritzsche and M. Cuevas, Phys. Rev. 119, 1238 (1960).
N. N. Volokobinskaya, V. V. Galavanov, and D. N. Nasledov, Fiz. Tverd. Tela (Leningrad) 1, 755 (1959) [Sov. Phys. Solid State 1, 687 (1959)].
M. I. Daunov, I. K. Kamilov, and V. A. Elizarov, Fiz. Tverd. Tela (St. Petersburg) 37, 2276 (1995) [Phys. Solid State 37, 1245 (1995)].
N. G. Yaremenko, Fiz. Tekh. Poluprovodn. (Leningrad) 9, 840 (1975) [Sov. Phys. Semicond. 9, 554 (1975)].
E. H. Putly, Semicond. Semimet. 1, 289 (1966).
D. J. Somerford, J. Phys. C 4, 1570 (1971).
E. M. Gershenzon, V. A. Il’in, I. N. Kurilenko, and A. B. Litvak-Gorskaya, Fiz. Tekh. Poluprovodn. (Leningrad) 9, 1324 (1975) [Sov. Phys. Semicond. 9, 874 (1975)].
B. A. Aronzon and N. K. Chumakov, Fiz. Tverd. Tela (Leningrad) 31(4), 10 (1989) [Sov. Phys. Solid State 31, 550 (1989)].
M. I. Daunov, I. K. Kamilov, and S. F. Gabibov, in Abstracts of III International Conference on Phase Transformations at High Pressures (Chernogolovka, Russia, 2004), p. 23.
M. I. Daunov, I. K. Kamilov, R. K. Arslanov, et al., in Abstracts of Joint EHPRG’42 and COST Action D30 Meeting on Advances on High Pressure Research (Lausanne, Switzerland, 2004), p. 75.
Author information
Authors and Affiliations
Additional information
Original Russian Text © M.I. Daunov, I.K. Kamilov, S.F. Gabibov, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 536–541.
Rights and permissions
About this article
Cite this article
Daunov, M.I., Kamilov, I.K. & Gabibov, S.F. On metal-insulator electronic phase transitions in semiconductors. Semiconductors 40, 521–526 (2006). https://doi.org/10.1134/S1063782606050034
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1134/S1063782606050034