Abstract
Methods for finding the parameters (energies and capture coefficients for electrons and holes) of the levels involved in the formation of the recombination flux are suggested. The temperature variation of these parameters for AlGaN/InGaN/GaN and InGaN/SiC structures is discussed. The parameters of the levels responsible for tunneling recombination are determined.
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N. S. Grushko, A. V. Lakalin, and D. A. Andreev, in Critical Technology and Fundamental Problems in the Physics of Condensed Media (Ul’yan. Gos. Univ., Ul’yanovsk, 2001), p. 73 [in Russian].
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Original Russian Text © N.S. Grushko, E.A. Loginova, L.N. Potanakhina, 2006, published in Fizika i Tekhnika Poluprovodnikov, 2006, Vol. 40, No. 5, pp. 584–588.
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Grushko, N.S., Loginova, E.A. & Potanakhina, L.N. Tunneling recombination in spatially inhomogeneous structures. Semiconductors 40, 570–573 (2006). https://doi.org/10.1134/S1063782606050101
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DOI: https://doi.org/10.1134/S1063782606050101