Recombination and trapping centers in pure and doped TlBr crystals I. M. GazizovV. M. ZaletinN. B. Smirnov Electronic Properties of Semiconductors 31 August 2014 Pages: 1123 - 1133
Decrease in the binding energy of donors in heavily doped GaN:Si layers I. V. OsinnykhK. S. ZhuravlevD. Yu. Kazantsev Electronic Properties of Semiconductors 31 August 2014 Pages: 1134 - 1138
Temperature and magnetic-field dependences of the thermoelectric power of electronic indium antimonide M. M. GadjialievZ. Sh. PirmagomedovT. N. Efendieva Electronic Properties of Semiconductors 31 August 2014 Pages: 1139 - 1140
On the kinetics of electron processes in 60Co γ-irradiated n-Ge single crystals G. P. Gaidar Electronic Properties of Semiconductors 31 August 2014 Pages: 1141 - 1144
Structural and optical properties of ZnO films produced by a nonvacuum chemical technique V. V. StrelchukK. A. AvramenkoV. M. Tkach Electronic Properties of Semiconductors 31 August 2014 Pages: 1145 - 1150
Features of the local structure of the Se95Te5 chalcogenide vitreous semiconductor doped with samarium S. I. MekhtiyevaA. I. IsayevV. Z. Zeynalov Electronic Properties of Semiconductors 31 August 2014 Pages: 1151 - 1154
Analysis of thermal emission processes of electrons from arrays of InAs quantum dots in the space charge region of GaAs matrix A. V. BaklanovA. A. GutkinS. G. Konnikov Electronic Properties of Semiconductors 31 August 2014 Pages: 1155 - 1160
Nature of the blue emission band in zinc selenide containing sulfur isovalent impurity V. P. MakhniyA. M. SlyotovE. V. Stez Spectroscopy, Interaction with Radiation 31 August 2014 Pages: 1161 - 1162
On the band-gap width of (FeIn2S4)1 − x (In2S3) x alloys I. V. Bodnar Surfaces, Interfaces, and Thin Films 31 August 2014 Pages: 1163 - 1166
On the collection of photocarriers in high-resistance silicon amorphous-crystalline heterostructures I. M. KotinaA. M. DanishevskiiL. M. Tuhkonen Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1167 - 1173
Charge-transport mechanisms in heterostructures based on TiO2:Cr2O3 thin films A. I. MostovoiV. V. BrusP. D. Maryanchuk Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1174 - 1177
Effect of nanobridges on the emission spectra of a quantum dot-quantum well tunneling pair V. G. TalalaevG. E. CirlinP. N. Racec Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1178 - 1184
Optical properties of heterostructures with deep AlSb/InAs0.84Sb0.16/AlSb quantum wells N. V. PavlovG. G. Zegrya Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1185 - 1195
Ion-beam synthesis of InSb nanocrystals in the buried SiO2 layer of a silicon-on-insulator structure I. E. TyschenkoM. VoelskowV. P. Popov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 31 August 2014 Pages: 1196 - 1201
Effect of the duration of electrochemical anodization on the microhardness of macroporous silicon A. A. DmitrievskiyN. Yu. EfremovaD. G. Guseva Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 August 2014 Pages: 1202 - 1204
Tunneling transport through passivated CdS nanocrystal arrays grown by the Langmuir-Blodgett method K. A. SvitD. Yu. ProtasovK. S. Zhuravlev Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 August 2014 Pages: 1205 - 1210
Surface of porous silicon under hydrophilization and hydrolytic degradation V. P. UlinN. V. UlinA. V. Bobyl Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 31 August 2014 Pages: 1211 - 1216
Effect of postgrowth techniques on the characteristics of triple-junction InGaP/Ga(In)As/Ge solar cells V. M. AndreevE. A. GrebenshchikovaA. A. Usikova Physics of Semiconductor Devices 31 August 2014 Pages: 1217 - 1221
Influence of gate-to-source and gate-to-drain recesses on GaAs camel-like gate field-effect transistors Jung-Hui TsaiYou-Ren WuWen-Chau Liu Physics of Semiconductor Devices 31 August 2014 Pages: 1222 - 1225
Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells I. S. Vasil’evskiiA. N. VinichenkoM. N. Strikhanov Physics of Semiconductor Devices 31 August 2014 Pages: 1226 - 1232
Interaction of heterogeneous thin films and phase formation in the Tl-Fe-S system E. B. AsgerovA. I. MadadzadaR. N. Mehdiyeva Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1233 - 1236
Effect of ion-beam treatment during reactive radio-frequency magnetron sputtering on the concentration and mobility of charge carriers in ITO films P. N. KrylovR. M. ZakirovaI. V. Fedotova Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1237 - 1241
Electrical and optical properties of zinc-oxide films deposited by the ion-beam sputtering of an oxide target A. P. DostankoO. A. AgeevZ. E. Vakulov Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1242 - 1247
Temperature stability of contact systems for GaSb-based photovoltaic converters V. P. KhvostikovS. V. SorokinaN. Kh. Timoshina Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1248 - 1253
High-power AlGaInN LED chips with two-level metallization D. A. ZakheimG. V. ItkinsonD. A. Bauman Fabrication, Treatment, and Testing of Materials and Structures 31 August 2014 Pages: 1254 - 1259