Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs V. V. PreobrazhenskiiM. A. PutyatoB. R. Semyagin Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 837 - 840
Threshold of inelastic strain formation in Si and GaAs surface layers under multiple pulsed laser irradiation S. V. VintsentsA. V. ZoteevG. S. Plotnikov Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 841 - 844
Dissociation energies of a CiCs complex and the A center in silicon N. I. BoyarkinaS. A. SmagulovaA. A. Artem’ev Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 845 - 847
Initial stages of growth of diamond island films on crystalline silicon N. A. FeoktistovV. V. Afanas’evV. G. Melekhin Atomic Structure and Nonelectronic Properties Pages: 848 - 851
Local structure of zinc impurity centers in lead chalcogenides and Pb1−x SnxTe solid solutions S. A. NemovN. P. Seregin Electronic and Optical Properties of Semiconductors Pages: 852 - 854
Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions T. I. VoroninaT. S. LagunovaYu. P. Yakovlev Electronic and Optical Properties of Semiconductors Pages: 855 - 862
Optical properties of bulk and epitaxial unordered GaxIn1−x P semiconductor alloys Ya. I. VyklyukV. G. DeibukS. V. Zolotarev Electronic and Optical Properties of Semiconductors Pages: 863 - 868
Electrical and thermoelectric properties of p-Ag2Te F. F. AlievE. M. KerimovaS. A. Aliev Electronic and Optical Properties of Semiconductors Pages: 869 - 873
Photoconductivity of coarse-grained CdTe polycrystals S. A. MedvedevYu. V. KlevkovA. F. Plotnikov Electronic and Optical Properties of Semiconductors Pages: 874 - 877
Time-resolved photoluminescence of polycrystalline GaN layers on metal substrates A. V. AndrianovK. YamadaN. N. Zinov’ev Electronic and Optical Properties of Semiconductors Pages: 878 - 882
Low-threshold defect formation and modification of Ge surface layer under elastic and elastoplastic pulsed laser effects S. V. VintsentsV. B. ZaitsevA. V. Chervyakov Semiconductor Structures, Interfaces, and Surfaces Pages: 883 - 888
Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structure G. G. KarevaM. I. VexlerA. F. Shulekin Semiconductor Structures, Interfaces, and Surfaces Pages: 889 - 894
Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis G. A. LyubasN. N. LedentsovD. Gerthsen Low-Dimensional Systems Pages: 895 - 898
Wavelength of emission from InGaAsN quantum wells as a function of composition of the quaternary compound A. E. ZhukovA. R. KovshJ. Y. Chi Low-Dimensional Systems Pages: 899 - 902
Two-dimensional p-n junction under equilibrium conditions A. Sh. AchoyanA. É. YesayanS. G. Petrosyan Low-Dimensional Systems Pages: 903 - 907
Calculations of the charge-carrier mobility and the thermoelectric figure of merit for multiple-quantum-well structures D. A. Pshenai-SeverinYu. I. Ravich Low-Dimensional Systems Pages: 908 - 915
Nonlinear response and nonlinear coherent generation in resonant-tunneling diode in a broad frequency range V. F. ElesinI. Yu. KateevA. I. Podlivaev Low-Dimensional Systems Pages: 916 - 920
Anomalies of the fractional quantum hall effect in a wide ballistic wire Z. D. KvonE. B. OlshanetskyJ. C. Portal Low-Dimensional Systems Pages: 921 - 923
Special features of electrical conductivity in a parabolic quantum well in a magnetic field E. P. SinyavskiiR. A. Khamidullin Low-Dimensional Systems Pages: 924 - 928
Manifestation of A(+) centers in the luminescence of two-dimensional GaAs/AlGaAs structures Yu. L. IvanovN. V. AgrinskayaG. É. Tsyrlin Low-Dimensional Systems Pages: 929 - 931
One-dimensional photonic crystal obtained by vertical anisotropic etching of silicon V. A. TolmachevL. S. GranitsynaE. V. Astrova Low-Dimensional Systems Pages: 932 - 935
Gamma-irradiation-induced metastable states of undoped amorphous hydrogenated silicon M. S. AblovaG. S. KulikovS. K. Persheev Amorphous, Vitreous, and Porous Semiconductors Pages: 936 - 940
Fabrication and properties of amorphous hydrogenated boron carbide films A. S. Anan’evO. I. Kon’kovI. N. Trapeznikova Amorphous, Vitreous, and Porous Semiconductors Pages: 941 - 943
Lattice-matched GaInPAsSb/InAs structures for devices of infrared optoelectronics M. AidaralievN. V. ZotovaE. A. Kognovitskaya Physics of Semiconductor Devices Pages: 944 - 949