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Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structure

  • Semiconductor Structures, Interfaces, and Surfaces
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Abstract

A number of effects in metal/(tunnel-thin SiO2)/p +-Si structures associated with electron tunneling from the valence band of bulk Si into a metal have been studied. The tunneling occurs through two successively arranged tunnel-transparent barriers: that of the depleted space charge region in Si and the SiO2 barrier, with the possible intermediate involvement of a quantum well formed by the Si conduction band. The current-voltage characteristics of the structures are calculated in terms of a simple model that considers these mechanisms for the purely depletion mode, i.e., with the inversion layer charge neglected. The relationship between the structure parameters (p-Si doping level and oxide thickness) and the relative contributions of nonresonant and resonant (via quantum-well levels in the Si conduction band) tunneling to the overall current through an MOS structure is discussed. The conditions most favorable for the observation of resonance effects are formulated.

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Authors and Affiliations

  1. Institute of Physics, St. Petersburg State University, St. Petersburg, 198504, Russia

    G. G. Kareva

  2. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    M. I. Vexler, I. V. Grekhov & A. F. Shulekin

Authors
  1. G. G. Kareva
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  2. M. I. Vexler
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  3. I. V. Grekhov
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  4. A. F. Shulekin
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Additional information

__________

Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 953–958.

Original Russian Text Copyright © 2002 by Kareva, Vexler, Grekhov, Shulekin.

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Kareva, G.G., Vexler, M.I., Grekhov, I.V. et al. Electron tunneling through a double barrier in a reverse-biased metal-oxide-silicon structure. Semiconductors 36, 889–894 (2002). https://doi.org/10.1134/1.1500466

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  • DOI: https://doi.org/10.1134/1.1500466

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