Abstract
The potentialities of vertical anisotropic etching of (110) silicon for the fabrication of one-dimensional photonic crystal with a high refractive index contrast have been studied. It is shown that advances toward the near-IR spectral range are limited by the mechanical strength of thin silicon walls. The device structures obtained consist of 50 trenches, 114 µm deep, with 1.8-µm-thick Si walls (structure period 8 µm). Their reflectance spectra in the wavelength range 2.5–16.5 µm show good agreement with calculation results, although the main photonic band gap at λ≈28±10 µm remained outside the spectral region of measurements.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 996–1000.
Original Russian Text Copyright © 2002 by Tolmachev, Granitsyna, Vlasova, Volchek, Nashchekin, Remenyuk, Astrova.
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Tolmachev, V.A., Granitsyna, L.S., Vlasova, E.N. et al. One-dimensional photonic crystal obtained by vertical anisotropic etching of silicon. Semiconductors 36, 932–935 (2002). https://doi.org/10.1134/1.1500475
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DOI: https://doi.org/10.1134/1.1500475