Abstract
The electron band structure of GaxIn1−x P bulk solid solutions was calculated by the local model pseudopotential method taking into account lattice mismatch. The resulting local strain of the lattice was taken into account in calculations of effective mass and deformation potential. The main optical characteristics of GaxIn1−x P alloys can be explained by the presence of internal local strains and antisite defects. In comparison with bulk samples, the concentration dependences of the spectral peaks E 1 and E 1+Δ1 in pseudomorphic thin films were found to be more sensitive than the fundamental absorption edge E 0 to deformations caused by the substrate.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 925–931.
Original Russian Text Copyright © 2002 by Vyklyuk, De\(\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} \)buk, Zolotarev.
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Vyklyuk, Y.I., Deibuk, V.G. & Zolotarev, S.V. Optical properties of bulk and epitaxial unordered GaxIn1−x P semiconductor alloys. Semiconductors 36, 863–868 (2002). https://doi.org/10.1134/1.1500461
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DOI: https://doi.org/10.1134/1.1500461