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Initial stages of growth of diamond island films on crystalline silicon

  • Atomic Structure and Nonelectronic Properties
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Abstract

The results of the investigation of the initial stages of growth of diamond island films, which were formed by hot-filament chemical-vapor deposition on optically polished crystalline silicon, are reported. Atomic force microscopy was used to study the evolution of islands, formed at the initial growth stages, during annealing. It was found that at the initial growth stages the island density changes due to the coalescence of closely spaced islands. Then, after the islands increase in size up to the critical value, Ostwald ripening of the islands sets in.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    N. A. Feoktistov, V. G. Golubev, S. A. Grudinkin & V. G. Melekhin

  2. Laboratory of Semiconductor Physics, University of Leuven, B-3001, Leuven, Belgium

    V. V. Afanas’ev

  3. Institute of Problems in Machine Science, Russian Academy of Sciences, Vasil’evskii ostrov, Bol’shoi pr. 61, St. Petersburg, 199178, Russia

    S. A. Kukushkin

Authors
  1. N. A. Feoktistov
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  2. V. V. Afanas’ev
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  3. V. G. Golubev
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  4. S. A. Grudinkin
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  5. S. A. Kukushkin
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  6. V. G. Melekhin
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 910–913.

Original Russian Text Copyright © 2002 by Feoktistov, Afanas’ev, Golubev, Grudinkin, Kukushkin, Melekhin.

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Feoktistov, N.A., Afanas’ev, V.V., Golubev, V.G. et al. Initial stages of growth of diamond island films on crystalline silicon. Semiconductors 36, 848–851 (2002). https://doi.org/10.1134/1.1500458

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  • DOI: https://doi.org/10.1134/1.1500458

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