Abstract
The influence of tellurium impurity on the electrical properties of Ga1−X InXAsYSb1−Y (X=0.22 and X=0.24) solid solutions grown by liquid-phase epitaxy from lead-containing solution-melts was studied. Defect healing was shown to take place at low tellurium doping levels (X LTe <2×10−5 at. %) in inhomogeneous highly compensated p-type solid solutions. Thus, it is possible to produce slightly compensated p-type materials with a low density of impurities and structural defects. High doping levels allow production of n-type materials with the electron density n=1017–1019 cm−3. Electroluminescence spectra of n-GaInAsSb/p-GaSb heterostructures are promising for the development of light-emitting diodes with a wavelength λ=2.0–2.5 µm.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 917–924.
Original Russian Text Copyright © 2002 by Voronina, Lagunova, Kunitsyna, Parkhomenko, Sipovskaya, Yakovlev.
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Voronina, T.I., Lagunova, T.S., Kunitsyna, E.V. et al. Influence of tellurium impurity on the Properties of Ga1−X InXAsYSb1−Y (X>0.22) solid solutions. Semiconductors 36, 855–862 (2002). https://doi.org/10.1134/1.1500460
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DOI: https://doi.org/10.1134/1.1500460