Abstract
Boron carbide films were grown using glow discharge decomposition of C2B10H12 powder sublimation products. The film composition found as a-B0.52C0.48:H using nuclear reaction and infrared spectroscopy techniques was shown to depend weakly on the discharge gas (Ar or He) and the substrate temperature (20–100°C). The optical band gap was found to be about 3.8 eV; the resistivity varied from 106 to 105 Ω cm as the substrate temperature increased. Weak photoluminescence with a peak at 475 nm indicates that there is an acceptor level in the band gap which correlates with the conduction activation energy.
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Translated from Fizika i Tekhnika Poluprovodnikov, Vol. 36, No. 8, 2002, pp. 1006–1009.
Original Russian Text Copyright © 2002 by Anan’ev, Kon’kov, Lebedev, Novokhatski, Terukov, Trapeznikova.
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Anan’ev, A.S., Kon’kov, O.I., Lebedev, V.M. et al. Fabrication and properties of amorphous hydrogenated boron carbide films. Semiconductors 36, 941–943 (2002). https://doi.org/10.1134/1.1500477
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DOI: https://doi.org/10.1134/1.1500477