The nature of the C-defects in nickel and their rôle in the interpretation of radiation damage in metals B. AspacherW. FrankK. Maier Invited Paper Pages: 339 - 348
Secondary-electron emission of ion-implanted semiconductors in scanning electron microscopy T. Nshanian Solids And Materials Pages: 349 - 355
Photorefractive measurements on electron-irradiated semi-insulating GaAs P. DelayeH. J. von BardelebenG. Roosen Solids And Materials Pages: 357 - 364
Charge compensation and the luminescence of Cr3+ in KMgF3 D. R. LeeT. P. J. HanB. Henderson Solids And Materials Pages: 365 - 372
Photoconductivity of erbium-doped germanium H. NavarroT. TimuskD. C. Houghton Solids And Materials Pages: 373 - 379
Conversion-electron Mössbauer spectroscopy using 121Sb and a study of powdered α-Sb2O3 W. Meisel Solids And Materials Pages: 381 - 384
Glass transition temperature and molar volume versus average coordination number in Ge100−x S x bulk glasses G. Saffarini Solids And Materials Pages: 385 - 388
Thick gold-film deposition by high-repetition visible pulsed-laser chemical vapor deposition Y. MorishigeS. Kishida Surfaces And Multilayers Pages: 395 - 399
Spectroscopic optical second-harmonic generation from semiconductor interfaces J. F. McGilpM. CavanaghJ. D. O'Mahony Surfaces And Multilayers Pages: 401 - 405
Thermal deformation of a solid surface under laser irradiation M. VicanekA. RoschG. Simon Surfaces And Multilayers Pages: 407 - 412
Photoemission study of the growth of the NdF3/Si(111) interface K. M. ColbowS. CrammW. Eberhardt Surfaces And Multilayers Pages: 413 - 418
An artefact in scanning tunneling microscopy images of highly oriented pyrolytic graphite J. J. PaggelM. Förster Surfaces And Multilayers Pages: 419 - 425
Detection of C–H bonds in crystalline α-SiC by IR-absorption measurements K. RottnerR. Helbig Surfaces And Multilayers Pages: 427 - 429
Determination of electron-diffusion length from photocurrent characteristics of the structure ITO/a-SiC:H(p-type)/a-Si:H/a-Si:H(n-type)/Pd T. SerinN. Serin Surfaces And Multilayers Pages: 431 - 433
Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA) A. MarkwitzH. BaumannK. Bethge Surfaces And Multilayers Pages: 435 - 439
Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs E. Kuphal Rapid Communication Pages: 441 - 443
Vibrational property of the slow N 2 + ions deposited SiNx films D. H. BaekJ. W. Chung Rapid Communication Pages: 445 - 448