Skip to main content
SpringerLink
Log in

Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs

  • Rapid Communication
  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Sn and Te are used as n-type dopants in LPE In0.53Ga0.47 As contact layers, and carrier concentrations up to 2.2·1019 cm−3 are obtained for both dopants. The distribution coefficients are kSn=(1.55±0.10)·10−3 and kTe≈0.11, respectively. With Sn a better control of the doping level is achieved than with Te, but the large amount of Sn necessary strongly affects the phase diagram. In order to facilitate the growth of InGaAs:Sn, the phase equilibria in the system In-Ga-As-Sn near 600° C are established. The liquid interaction parameters α(Ga-Sn) and α(As-Sn) are determined as 700 and -2050 cal/mole, respectively.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

References

  1. R.E. Honig, D.A. Cramer: RCA Rev. 30, 285 (1969)

    Google Scholar 

  2. T.P. Pearsall, J.P. Hirtz: J. Crystal Growth 54, 127 (1981)

    Google Scholar 

  3. F. Fiedler, H.H. Wehmann, A. Schlachetzki: J. Crystal Growth 74, 27 (1986)

    Google Scholar 

  4. P.A. Claxton, J. Shirafuji, P.A. Houston, P.N. Robson: Electron. Lett. 18, 213 (1982)

    Google Scholar 

  5. G. Traeger, E. Kuphal, K.-H. Zschauer: J. Crystal Growth 88, 205 (1988)

    Google Scholar 

  6. E. Kuphal: Appl. Phys. A 52, 380 (1991)

    Google Scholar 

  7. M.B. Panish: J. Appl. Phys. 44, 2667 (1973)

    Google Scholar 

  8. E. Kuphal: E-MRS Proc. 16, 201 (Les Editions de Physique, Paris, 1987)

    Google Scholar 

  9. A. Eisenbach, E. Kuphal, K. Miethe, H.L. Harnagel: J. Crystal Growth 135, 129 (1994)

    Google Scholar 

  10. E. Kuphal, K. Mause, K. Miethe, A. Eisenbach, F. Fiedler, A. Corbet: Solid-State Electron. (1994), in press

Download references

Author information

Authors and Affiliations

  1. Deutsche Bundespost Telekom, Forschungszentrum, PO. Box 100003, D-64276, Darmstadt, Germany

    E. Kuphal

Authors
  1. E. Kuphal
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kuphal, E. Phase diagram and LPE growth of strongly Sn- and Te-doped InGaAs. Appl. Phys. A 59, 441–443 (1994). https://doi.org/10.1007/BF00331726

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF00331726

PACS

Search

Navigation