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Detection of C–H bonds in crystalline α-SiC by IR-absorption measurements

  • Surfaces And Multilayers
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Abstract

In SiC epilayers sp 3 C-H bond vibration bands were detected by infrared transmittance measurements. The absorption constants of the transmission peaks are related to the temperature at which the layers were grown and decrease with increasing growth temperature. The absorption centers vanish when the epilayer is removed or after annealing the sample at temperatures very much lower than the growth temperatures in a hydrogen-free atmosphere. These absorption centers are connected to hydrogen on silicon lattice sites.

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Authors and Affiliations

  1. Institut für angewandte Physik, Universität Erlangen, Staudtstrasse 7, D-91508, Erlangen, Germany

    K. Rottner

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  1. K. Rottner
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  2. R. Helbig
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Rottner, K., Helbig, R. Detection of C–H bonds in crystalline α-SiC by IR-absorption measurements. Appl. Phys. A 59, 427–429 (1994). https://doi.org/10.1007/BF00331723

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  • DOI: https://doi.org/10.1007/BF00331723

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