Abstract
Optical Second-Harmonic Generation (SHG) from semiconductor interfaces has been widely studied, but it is only recently, with the advent of commercial, tuneable, pulsed laser sources that the spectroscopic aspect of SHG has begun to be more widely exploited. Here, results from porous Si and Si(100)-Sb are reported, which illustrate the potential of spectroscopic SHG as a probe of semiconductor interfaces.
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McGilp, J.F., Cavanagh, M., Power, J.R. et al. Spectroscopic optical second-harmonic generation from semiconductor interfaces. Appl. Phys. A 59, 401–405 (1994). https://doi.org/10.1007/BF00331719
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DOI: https://doi.org/10.1007/BF00331719