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Secondary-electron emission of ion-implanted semiconductors in scanning electron microscopy

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Abstract

Signals from a modified Scanning Electron Microscope (SEM) in Secondary-Electron (SE) and Voltage-Contrast (VC) regimes were used to visualize and quantitatively analyze the Ion-Implanted Layer (IIL) in semiconductors. Silicon was used as substrate material for implantation. Various ion species were implanted and the dependence of the SE signal and the potential of the IIL upon doses were studied. The physical model for the explanation of the mechanism by which implantation influences SE emission of semiconductors is suggested. Certain applications of a new technique and method, particularly for the investigation of surface amorphization, the lateral extent of implanted ions and radiation damages and the kinetic of defect annealing and ion activation are discussed.

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Authors and Affiliations

  1. Physics Department, Rensselaer Polytechnic Institute, 12180, Troy, NY, USA

    T. Nshanian

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  1. T. Nshanian
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On leave from the Electronics Department, State Engineering University of Armenia, 375009 Yerevan, Armenia, under the NRC CAST Program

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Nshanian, T. Secondary-electron emission of ion-implanted semiconductors in scanning electron microscopy. Appl. Phys. A 59, 349–355 (1994). https://doi.org/10.1007/BF00331711

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  • DOI: https://doi.org/10.1007/BF00331711

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