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Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA)

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Abstract

15N +2 ions were implanted into c-Si with an energy of 5 keV/atom and fluences ranging from 5×1016 to 2×1017 atoms/cm2 at RT to form ultrathin silicon-nitride layers (SiN x ) with different N/Si ratios depending on the fluences (up to an overstoichiometric N/Si ratio of 1.65). The 15N depth distributions were analysed by the resonant nuclear reaction 15N(p, αγ)12C(E res=429 keV). The implanted samples were processed by Electron Beam Rapid Thermal Annealing (EB-RTA) at 1150° C for 15 s (ramping up and down 5° C/s). The chemical structure of the 15N implantation into Si was investigated by EXAFS and NEXAFS. Channeling-RBS (4He+, E 0=1.5 MeV) measurements were performed to observe the transition region (disordered-Si layer, d-Si) being underneath of the SiN x layer (typical values of layer thicknesses:SiN x 24 nm, d-Si 6 nm).

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Authors and Affiliations

  1. Institut für Kernphysik, J.W. Goethe-Universität, August-Euler-Strasse 6, D-60486, Frankfurt/Main, Germany

    A. Markwitz, H. Baumann, E. F. Krimmel, R. W. Michelmann, C. Maurer & K. Bethge

  2. Physics Department, Aristotle University of Thessaloniki, GR-Thessaloniki, Greece

    E. C. Paloura

  3. SIETEC at BESSY, D-Berlin, Germany

    A. Knop

Authors
  1. A. Markwitz
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  2. H. Baumann
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  3. E. F. Krimmel
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  4. R. W. Michelmann
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  5. C. Maurer
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  6. E. C. Paloura
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  7. A. Knop
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  8. K. Bethge
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Markwitz, A., Baumann, H., Krimmel, E.F. et al. Chemical bonding and interface analysis of ultrathin silicon-nitride layers produced by ion implantation and Electron Beam Rapid Thermal Annealing (EB-RTA). Appl. Phys. A 59, 435–439 (1994). https://doi.org/10.1007/BF00331725

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  • DOI: https://doi.org/10.1007/BF00331725

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