1. Foreword

   • Suzanne Mohney
   • Robert Stahlbush
   • Jamie Phillips

   EditorialNotes Pages: 511 - 511

2. Electrical properties of ZnO Nano-particles embedded in polyimide

   • E. K. Kim
   • J. H. Kim
   • Y. H. Kim

   OriginalPaper Pages: 512 - 515

3. Selective and nonselective wet etching of Zn_0.9Mg_0.1O/ZnO

   • Jau-Jiun Chen
   • Soohwan Jang
   • J. F. Weaver

   OriginalPaper Pages: 516 - 519

4. Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films

   • Y. I. Alivov
   • X. Bo
   • H. Morkoç

   OriginalPaper Pages: 520 - 524

5. Free carrier absorption and lattice vibrational modes in bulk ZnO

   • P. Y. Emelie
   • J. D. Phillips
   • U. D. Venkateswaran

   OriginalPaper Pages: 525 - 529

6. Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition

   • Y. J. Li
   • Y. W. Heo
   • D. P. Norton

   OriginalPaper Pages: 530 - 537

7. Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO

   • Priya Gopal
   • Nicola A. Spaldin

   OriginalPaper Pages: 538 - 542

8. Trap-related photoconductivity in ZnO epilayers

   • T. E. Murphy
   • K. Moazzami
   • J. D. Phillips

   OriginalPaper Pages: 543 - 549

9. Thermal conductivity of bulk ZnO after different thermal treatments

   • Ü. Özgür
   • X. Gu
   • J. E. Nause

   OriginalPaper Pages: 550 - 555

10. Valency configuration of transition metal impurities in ZnO

    • L. Petit
    • T. C. Schulthess
    • A. Janotti

    OriginalPaper Pages: 556 - 561

11. Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry

    • David Pritchett
    • Walter Henderson
    • W. Alan Doolittle

    OriginalPaper Pages: 562 - 567

12. Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates

    • S. Kasai
    • J. Kotani
    • H. Hasegawa

    OriginalPaper Pages: 568 - 575

13. Catalyst-free growth of GaN nanowires

    • K. A. Bertness
    • N. A. Sanford
    • I. Levin

    OriginalPaper Pages: 576 - 580

14. Schottky barrier formation at nonpolar Au/GaN epilayer interfaces

    • D. E. Walker Jr.
    • M. Gao
    • L. J. Brillson

    OriginalPaper Pages: 581 - 586

15. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes

    • Wonseok Lee
    • Jae Limb
    • Russell D. Dupuis

    OriginalPaper Pages: 587 - 591

16. Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

    • Kai Cheng
    • M. Leys
    • G. Borghs

    OriginalPaper Pages: 592 - 598

17. Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures

    • S. Elhamri
    • W. C. Mitchel
    • G. R. Landis

    OriginalPaper Pages: 599 - 604

18. Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN

    • Katherine H. A. Bogart
    • John Crofton

    OriginalPaper Pages: 605 - 612

19. Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN

    • Z. -Q. Fang
    • D. C. Look
    • I. Adesida

    OriginalPaper Pages: 613 - 617

20. Extraction of SiO₂/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C

    • Yanqing Deng
    • Wei Wang
    • T. Paul Chow

    OriginalPaper Pages: 618 - 624

21. Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC

    • Hrishikesh Das
    • Yaroslav Koshka
    • J. L. Wyatt

    OriginalPaper Pages: 625 - 629

22. Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC

    • S. K. Chanda
    • Y. Koshka
    • M. Yoganathan

    OriginalPaper Pages: 630 - 634

23. Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

    • W. Y. Shim
    • K. A. Jeon
    • W. Y. Lee

    OriginalPaper Pages: 635 - 640

24. Growth of AlGaN alloys exhibiting enhanced luminescence efficiency

    • A. V. Sampath
    • G. A. Garrett
    • M. Wraback

    OriginalPaper Pages: 641 - 646

25. Electrical and optical characterization studies of lower dose Si-implanted Al_xGa_1−xN

    • Mee-Yi Ryu
    • Y. K. Yeo
    • T. D. Steiner

    OriginalPaper Pages: 647 - 653

26. Investigation of GaN_xP_1−x/GaP LED structure optical properties

    • L. Peternai
    • J. Kovac
    • B. Rheinlaender

    OriginalPaper Pages: 654 - 657

27. Annealing temperature dependence of TiB₂ schottky barrier contacts on n-GaN

    • Rohit Khanna
    • S. J. Pearton
    • I. Kravchenko

    OriginalPaper Pages: 658 - 662

28. Electrical properties of undoped bulk ZnO substrates

    • A. Y. Polyakov
    • N. B. Smirnov
    • Amir Dabiran

    OriginalPaper Pages: 663 - 669

29. High-yield GaN nanowire synthesis and field-effect transistor fabrication

    • Huaqiang Wu
    • Ho-Young Cha
    • Goutam Koley

    OriginalPaper Pages: 670 - 674

30. Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates

    • T. J. Anderson
    • F. Ren
    • M. Schimpf

    OriginalPaper Pages: 675 - 679

31. Selective dry etching of (Sc₂O₃)_x(Ga₂O₃)_1−x gate dielectrics and surface passivation films on GaN

    • M. Hlad
    • L. Voss
    • F. Ren

    OriginalPaper Pages: 680 - 684

32. Si-diffused GaN for enhancement-mode GaN mosfet on si applications

    • Soohwan Jang
    • F. Ren
    • J. Thuret

    OriginalPaper Pages: 685 - 690

33. ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy

    • F. X. Xiu
    • Z. Yang
    • R. C. Haddon

    OriginalPaper Pages: 691 - 694

34. Growth of InGaN HBTs by MOCVD

    • Theodore Chung
    • Jae Limb
    • Zusanne Lilienthal-Weber

    OriginalPaper Pages: 695 - 700

35. Effect of thin strain-compensated Al_0.6Ga_0.4P layers on the growth of multiple-stacked InP/In_0.5Al_0.3Ga_0.2P quantum dots

    • X. B. Zhang
    • J. H. Ryou
    • N. Holonyak Jr.

    OriginalPaper Pages: 701 - 704

36. Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices

    • X. B. Zhang
    • J. H. Ryou
    • N. Holonyak Jr.

    OriginalPaper Pages: 705 - 710

37. Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

    • R. Groenen
    • E. R. Kieft
    • M. C. M. Van de Sanden

    OriginalPaper Pages: 711 - 716

38. Photoluminescence properties of GaN with dislocations induced by plastic deformation

    • Ichiro Yonenaga
    • Hisao Makino
    • Takafumi Yao

    OriginalPaper Pages: 717 - 721

39. High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures

    • Y. Q. Tao
    • D. J. Chen
    • Y. D. Zheng

    OriginalPaper Pages: 722 - 725

40. Comparison of MOS capacitors on n- and p-type GaN

    • W. Huang
    • T. Khan
    • T. Paul Chow

    OriginalPaper Pages: 726 - 732

41. Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements

    • Massimo Galluppi
    • Lutz Geelhaar
    • Henning Riechert

    OriginalPaper Pages: 733 - 737

42. Electrical transport properties of single GaN and InN nanowires

    • Chih-Yang Chang
    • Gou-Chung Chi
    • S. J. Pearton

    OriginalPaper Pages: 738 - 743

43. GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy

    • Chaiyasit Kumtornkittikul
    • Masakazu Sugiyama
    • Yoshiaki Nakano

    OriginalPaper Pages: 744 - 749

44. Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs

    • Craig G. Moe
    • Mathew C. Schmidt
    • David Emerson

    OriginalPaper Pages: 750 - 753

45. Characterization of Ti schottky diodes on epi-regrown 4H-SiC

    • Lin Zhu
    • Canhua Li
    • Anant Agarwal

    OriginalPaper Pages: 754 - 757

46. Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties

    • A. Umar
    • Y. H. Im
    • Y. B. Hahn

    OriginalPaper Pages: 758 - 765

47. Metalorganic chemical vapor deposition and characterization of ZnO materials

    • Shangzu Sun
    • Gary S. Tompa
    • Puneet Masaun

    OriginalPaper Pages: 766 - 770

48. Digital etching of III-N materials using a two-step Ar/KOH technique

    • David Keogh
    • Peter Asbeck
    • Milton Feng

    OriginalPaper Pages: 771 - 776

49. Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications

    • S. S. Hullavarad
    • R. D. Vispute
    • M. Dubey

    OriginalPaper Pages: 777 - 794

50. Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer

    • John F. Conley Jr.
    • Lisa Stecker
    • Yoshi Ono

    OriginalPaper Pages: 795 - 802