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Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping

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Abstract

Aluminum-doped zinc oxide films exhibiting a rough surface morphology are deposited on glass substrates utilizing expanding thermal plasma. Spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in the zinc oxide bandgap energy from 3.32 to 3.65 eV. In combination with transmission reflection measurements in the visible and NIR ranges, charge carrier densities, optical mobilities, and film resistivities have been obtained from the free carrier absorption. Film resistivities are consistent with direct measurements, values as low as 6.0×10−4 ω cm have been obtained. The interdependence of electrical conductivity, film composition, and film morphology is addressed.

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Authors and Affiliations

  1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands

    R. Groenen, E. R. Kieft & M. C. M. Van de Sanden

  2. TNO TPD, Division Models and Processes, P.O. Box 595, 5600 AN, Eindhoven, The Netherlands

    J. L. Linden

Authors
  1. R. Groenen
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  2. E. R. Kieft
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  3. J. L. Linden
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  4. M. C. M. Van de Sanden
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Groenen, R., Kieft, E.R., Linden, J.L. et al. Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping. J. Electron. Mater. 35, 711–716 (2006). https://doi.org/10.1007/s11664-006-0126-9

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  • DOI: https://doi.org/10.1007/s11664-006-0126-9

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