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Investigation of GaNxP1−x/GaP LED structure optical properties

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Abstract

GaNxP1−x alloy represents a novel compound semiconductor that has attracted considerable interest as a candidate for realization of light emitting diodes (LEDs) in the green-red range of the visible spectra. Simple GaNxP1−x/GaP LED structures grown by low-preassure metalorganic vapor phase epitaxy and containing different N contents (0.6–2.3%) were investigated. The hierarchy of N complexes that generate different bound states were determined from photocurrent and electroluminescence spectra for different N concentrations in the GaNxP1−x layer. From the experimental measurements, it was confirmed that the electroluminescence emission peaks show discrete emission maxima at ∼608 nm and ∼628 nm with increasing N content due to formation of N clusters.

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Authors and Affiliations

  1. Microelectronics Department, Slovak University of Technology, Ilkovicova 3, 81219, Bratislava, Slovak Republic

    L. Peternai, J. Kovac & J. Jakabovic

  2. University of Leipzig, Linnéstrasse 3, 04103, Leipzig, Germany

    V. Gottschalch & B. Rheinlaender

Authors
  1. L. Peternai
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  2. J. Kovac
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  3. J. Jakabovic
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  4. V. Gottschalch
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  5. B. Rheinlaender
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Peternai, L., Kovac, J., Jakabovic, J. et al. Investigation of GaNxP1−x/GaP LED structure optical properties. J. Electron. Mater. 35, 654–657 (2006). https://doi.org/10.1007/s11664-006-0115-z

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  • DOI: https://doi.org/10.1007/s11664-006-0115-z

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