Abstract
Interest in developing ultraviolet emitters using the III-Nitride family of semiconductors has sparked considerable effort in fabricating AlGaN alloys that exhibit enhanced luminescence based on strong carrier localization, similar to their InGaN brethren. In this paper, we report on the growth of such alloys by plasma-assisted molecular beam epitaxy (PA-MBE) without the use of indium. This enhancement is attributed to the presence of nanoscale compositional inhomogeneities (NCIs) in these materials. The emission wavelength in these materials has been tuned between 275 nm and 340 nm by varying growth conditions. The effects of dislocations on double heterostructures (DHs) that employ an NCI AlGaN active region has been investigated, with an internal quantum efficiency as high as 32% obtained for the lowest dislocation density samples (3×1010 cm−2). Prototype DH-ultraviolet light emitting diodes (DH-UVLEDs) emitting at 324 nm were fabricated employing an NCI AlGaN alloy as the active region.
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Sampath, A.V., Garrett, G.A., Collins, C.J. et al. Growth of AlGaN alloys exhibiting enhanced luminescence efficiency. J. Electron. Mater. 35, 641–646 (2006). https://doi.org/10.1007/s11664-006-0113-1
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DOI: https://doi.org/10.1007/s11664-006-0113-1