Abstract
The profile of trap density at the SiO2/SiC interface in SiC metal-oxide semiconductor field-effect transistors (MOSFETs) is critical to study the channel electron mobility and evaluate device performance under various processing and annealing conditions. In this work, we report on our results in determining the interface trap density in 4H- and 6H-SiC MOSFETs annealed in dry O2, NO, and CO2, respectively, based on the device transfer and currentvoltage characteristics in the subthreshold region at 25°C and 150°C. We also studied electron field-effect mobility, fixed oxide charge, and gate leakage in those devices.
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Deng, Y., Wang, W., Fang, Q. et al. Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C. J. Electron. Mater. 35, 618–624 (2006). https://doi.org/10.1007/s11664-006-0109-x
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DOI: https://doi.org/10.1007/s11664-006-0109-x