1. Foreword

   • Ishwara B. Bhat

   EditorialNotes Pages: 629 - 629

2. Large VLWIR Hg_1−xCd_xTe photovoltaic detectors

   • A. I. D’Souza
   • L. C. Dawson
   • G. Hildebrandt

   Special Issue Paper Pages: 630 - 635

3. Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy

   • R. Ashokan
   • N. K. Dhar
   • S. Sivananthan

   Special Issue Paper Pages: 636 - 640

4. Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

   • P. Ferret
   • J. P. Zanatta
   • G. Destefanis

   Special Issue Paper Pages: 641 - 647

5. In-situ evaluation of the anodic oxide growth on Hg_1−xCd_xTe (MCT) using ellipsometry and second harmonic generation

   • A. W. Wark
   • L. E. A. Berlouis
   • P. F. Brevet

   Special Issue Paper Pages: 648 - 653

6. Evaluation of Zn uniformity in CdZnTe substrates

   • R. Hirano
   • A. Hichiwa
   • T. Yamamoto

   Special Issue Paper Pages: 654 - 656

7. Enhanced diffusion and interdiffusion in HgCdTe from fermi-level effects

   • H. G. Robinson
   • M. A. Berding
   • B. J. Walker

   Special Issue Paper Pages: 657 - 663

8. Equilibrium properties of indium and iodine in LWIR HgCdTe

   • M. A. Berding

   Special Issue Paper Pages: 664 - 668

9. Strain relief in epitaxial HgCdTe by growth on a reticulated substrate

   • David R. Rhiger
   • Sanghamitra Sen
   • Eli E. Gordon

   Special Issue Paper Pages: 669 - 675

10. Critical thickness in the HgCdTe/CdZnTe system

    • M. A. Berding
    • W. D. Nix
    • A. Sher

    Special Issue Paper Pages: 676 - 679

11. HgCdZnTe quaternary materials for lattice-matched two-color detectors

    • S. M. Johnson
    • J. L. Johnson
    • M. D. Gorwitz

    Special Issue Paper Pages: 680 - 686

12. Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates

    • T. Skauli
    • T. Colin
    • S. Løvold

    Special Issue Paper Pages: 687 - 690

13. Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers

    • Y. Nemirovsky
    • G. Asa
    • A. Peyser

    Special Issue Paper Pages: 691 - 698

14. Time of flight experimental studies of CdZnTe radiation detectors

    • J. C. Erickson
    • H. W. Yao
    • M. Greaves

    Special Issue Paper Pages: 699 - 703

15. Transport properties of undoped Cd_0.9Zn_0.1Te grown by high pressure bridgman technique

    • Kazuhiko Suzuki
    • S. Seto
    • K. Imai

    Special Issue Paper Pages: 704 - 707

16. Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solution

    • Kaushik Chattopadhyay
    • Miguel Hayes
    • Ralph B. James

    Special Issue Paper Pages: 708 - 712

17. The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan

    • D. W. Parent
    • A. Rodriguez
    • F. C. Jain

    Special Issue Paper Pages: 713 - 717

18. Wurtzite CdS on CdTe grown by molecular beam epitaxy

    • P. Boieriu
    • R. Sporken
    • S. Sivananthan

    Special Issue Paper Pages: 718 - 722

19. ZnS-based visible-blind UV detectors: Effects of isoelectronic traps

    • I. K. Sou
    • Z. H. Ma
    • G. K. L. Wong

    Special Issue Paper Pages: 723 - 726

20. Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

    • F. Aqariden
    • H. D. Shih
    • P. K. Liao

    Special Issue Paper Pages: 727 - 728

21. Vacancies in Hg_1−xCd_xTe

    • D. Chandra
    • H. F. Schaake
    • A. J. Syllaios

    Special Issue Paper Pages: 729 - 731

22. Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy

    • Lijie Zhao
    • J. S. Speck
    • W. Hamilton

    Special Issue Paper Pages: 732 - 735

23. Effect of dislocations on performance of LWIR HgCdTe photodiodes

    • K. Jówikowski
    • A. Rogalski

    Special Issue Paper Pages: 736 - 741

24. In-situ control of temperature and alloy composition of Cd_1−xZn_xTe grown by molecular beam epitaxy

    • M. Daraselia
    • G. Brill
    • S. Sivananthan

    Special Issue Paper Pages: 742 - 747

25. CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

    • N. K. Dhar
    • P. R. Boyd
    • N. Goldsman

    Special Issue Paper Pages: 748 - 753

26. HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

    • L. A. Almeida
    • N. K. Dhar
    • J. H. Dinan

    Special Issue Paper Pages: 754 - 759

27. Selective epitaxy of cadmium telluride on silicon by MBE

    • R. Sporken
    • D. Grajewski
    • S. Sivananthan

    Special Issue Paper Pages: 760 - 764

28. Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy

    • R. Zhang
    • I. Bhat

    Special Issue Paper Pages: 765 - 769

29. Impurity segregation in horizontal bridgman grown cadmium zinc telluride

    • D. J. Reese
    • Cs. Szeles
    • K. A. Harris

    Special Issue Paper Pages: 770 - 774

30. Extraction of mobile impurities from CdZnTe

    • Sanghamitra Sen
    • David R. Rhiger
    • Paul R. Norton

    Special Issue Paper Pages: 775 - 780

31. Composition and thickness control of thin LPE HgCdTe layers using x-ray diffraction

    • S. P. Tobin
    • M. A. Hutchins
    • P. W. Norton

    Special Issue Paper Pages: 781 - 791

32. Percolation problem in boron—Implanted mercury cadmium telluride

    • N. Mainzer
    • E. Zolotoyabko

    Special Issue Paper Pages: 792 - 797

33. Precise measurements of the dispersion of the index of refraction for Cd_1−xZn_xTe alloys

    • F. C. Peiris
    • S. Lee
    • J. K. Furdyna

    Special Issue Paper Pages: 798 - 803

34. Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

    • T. T. Lam
    • C. D. Moore
    • M. D. Gorwitz

    Special Issue Paper Pages: 804 - 808

35. Fundamental physics of infrared detector materials

    • Michael A. Kinch

    Special Issue Paper Pages: 809 - 817

36. MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band

    • N. T. Gordon
    • R. S. Hall
    • A. M. White

    Special Issue Paper Pages: 818 - 822

37. A model for dark current and multiplication in HgCdTe avalanche photodiodes

    • S. Velicu
    • R. Ashokan
    • S. Sivananthan

    Special Issue Paper Pages: 823 - 827

38. A detailed calculation of the auger lifetime in p-type HgCdTe

    • S. Krishnamurthy
    • T. N. Casselman

    Special Issue Paper Pages: 828 - 831

39. Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion

    • Young-Ho Kim
    • Soo-Ho Bae
    • Choong Ki Kim

    Special Issue Paper Pages: 832 - 836

40. Characterization of Hg_0.7Cd_0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

    • J. Antoszewski
    • C. A. Musca
    • L. Faraone

    Special Issue Paper Pages: 837 - 840

41. HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology

    • J. M. Dell
    • J. Antoszewski
    • L. Faraone

    Special Issue Paper Pages: 841 - 848

42. Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped Cd_xHg_1−xTe

    • R. Haakenaasen
    • T. Colin
    • L. Trosdahl-Iversen

    Special Issue Paper Pages: 849 - 852

43. H₂-based dry plasma etching for mesa structuring of HgCdTe

    • E. P. G. Smith
    • C. A. Musca
    • L. Faraone

    Special Issue Paper Pages: 853 - 858

44. Characteristics of gradually doped LWIR diodes by hydrogenation

    • Young-Ho Kim
    • Tae-Sik Kim
    • Choong Ki Kim

    Special Issue Paper Pages: 859 - 864

45. TE- and TM-polarized optoelectronic properties of HgCdTe quantum wells

    • Vinod M. Menon
    • L. R. Ram-Mohan
    • J. R. Meyer

    Special Issue Paper Pages: 865 - 868

46. Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe

    • T. S. Lee
    • J. Garland
    • S. Sivananthan

    Special Issue Paper Pages: 869 - 872

47. SIMS quantification of As and In in Hg_1−xCd_xTe materials of different x values

    • Larry Wang
    • Lily H. Zhang

    Special Issue Paper Pages: 873 - 876

48. Analysis of 1/f noise in LWIR HgCdTe photodiodes

    • Soo Ho Bae
    • Sang Jun Lee
    • Choong Ki Kim

    Special Issue Paper Pages: 877 - 882

49. Molecular beam epitaxy of Zn_xBe_1−xSe: Influence of the substrate nature and epilayer properties

    • C. Chauvet
    • E. Tournié
    • J. P. Faurie

    Special Issue Paper Pages: 883 - 886

50. Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe

    • D. Chandra
    • F. Aqariden
    • H. D. Shih

    Special Issue Paper Pages: 887 - 892