Abstract
The radial uniformity of Zn concentration in 4 in. CdZnTe crystals was improved by keeping uniform temperature distribution in the VGF furnace. The maximum temperature difference at the outside of crucible in radial direction was reduced to less than 1. The size of voids observed outside of the crystals became small and the distribution has become well-uniformed. To evaluate the Zn uniformity, a new NIR (Near Infrared) instrument was developed using the diode array type spectrometer. The NIR spectra were analyzed by C.D. Maxey et al.’s method. The Zn concentration in 4 in. CdZnTe substrates grown by modified furnace was more uniform than that of the conventional substrates.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
C.D. Maxey, J.E. Gower, P. Capper, E.S. O’keefe, T. Skauli, and C.K. Ard, J. Cryst. Growth 197, 427 (1999).
S.M. Johnson, S. Sen, and W.H. Konkel, J. Vac. Sci. Technol. B9, 1897 (1991).
P. Capper, J.E. Harris, E.S. O’keefe, and C.L. Jones, Adv. Mater. for Optics and Electron. 5, 101 (1995).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hirano, R., Hichiwa, A., Maeda, H. et al. Evaluation of Zn uniformity in CdZnTe substrates. J. Electron. Mater. 29, 654–656 (2000). https://doi.org/10.1007/s11664-000-0200-7
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-000-0200-7