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HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature

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Abstract

The technique of spectroscopic ellipsometry (SE) has been utilized to monitor in real-time and precisely control the surface temperature of Hg1−xCdxTe during molecular beam epitaxy. Due to the temperature dependence of the Hg sticking coefficient under Hg-deficient growth conditions, the near-surface composition of an epilayer is extremely sensitive to surface temperature. SE data were acquired in real time and modeled using a previously established library of dielectric functions of Hg1−xCdxTe as a function of composition. Utilizing SE-generated compositional profiles as a guide, substrate heating power was adjusted in such a way as to minimize composition transients. To demonstrate the effectiveness of the technique, we have used SE to control the temperature of HgCdTe epilayer surfaces during deposition on three-inch (211)CdZnTe/ZnTe/Si composite substrates mounted on indium free holders.

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Authors and Affiliations

  1. E-OIR Measurements, Inc., USA

    L. A. Almeida

  2. Army Research Laboratory, USA

    N. K. Dhar

  3. Night Vision & Electronic Sensors Directorate, USA

    M. Martinka & J. H. Dinan

Authors
  1. L. A. Almeida
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  2. N. K. Dhar
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  3. M. Martinka
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  4. J. H. Dinan
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Almeida, L.A., Dhar, N.K., Martinka, M. et al. HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature. J. Electron. Mater. 29, 754–759 (2000). https://doi.org/10.1007/s11664-000-0220-3

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  • DOI: https://doi.org/10.1007/s11664-000-0220-3

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