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Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique

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Abstract

The electron drift mobility of undoped Cd0.9Zn0.1Te grown by high-pressure Bridgman method is measured by a time-of-flight technique. The sample shows a room temperature mobility and mobility lifetime product of 950 cm2/Vs and 1.6 × 10−4cm2/V, respectively. The mobility increases monotonically with decreasing temperature to 3000 cm2/Vs at 100 K. The dominant scattering mechanism for the electron transport is discussed by comparing with the theoretical mobility obtained by iterative solution of the Boltzmann equation.

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Authors and Affiliations

  1. Hokkaido Institute of Technology, 006-8585, Sapporo, Japan

    Kazuhiko Suzuki, A. Iwata, M. Bingo, T. Sawada & K. Imai

  2. Ishikawa National College of Technology, 929-0392, Ishikawa, Japan

    S. Seto

Authors
  1. Kazuhiko Suzuki
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  2. S. Seto
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  3. A. Iwata
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  4. M. Bingo
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  5. T. Sawada
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  6. K. Imai
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Suzuki, K., Seto, S., Iwata, A. et al. Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique. J. Electron. Mater. 29, 704–707 (2000). https://doi.org/10.1007/s11664-000-0209-y

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  • DOI: https://doi.org/10.1007/s11664-000-0209-y

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