Abstract
A series of n-type, indium-doped Hg1−xCdxTe (x∼0.225) layers were grown on Cd0.96Zn0.04Te(311)B substrates by molecular beam epitaxy (MBE). The Cd0.96Zn0.04Te(311)B substrates (2 cm × 3 cm) were prepared in this laboratory by the horizontal Bridgman method using double-zone-refined 6N source materials. The Hg1−xCdxTe(311)B epitaxial films were examined by optical microscopy, defect etching, and Hall measurements. Preliminary results indicate that the n-type Hg1−xCdxTe(311)B and Hg1−xCdxTe(211)B films (x ∼ 0.225) grown by MBE have comparable morphological, structural, and electrical quality, with the best 77 K Hall mobility being 112,000 cm2/V·sec at carrier concentration of 1.9×10+15 cm−3.
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H.D. Shih, to be published.
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Aqariden, F., Shih, H.D., Chandra, D. et al. Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B. J. Electron. Mater. 29, 727–728 (2000). https://doi.org/10.1007/s11664-000-0214-1
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DOI: https://doi.org/10.1007/s11664-000-0214-1