Electrical properties of ZnO Nano-particles embedded in polyimide E. K. KimJ. H. KimY. H. Kim OriginalPaper Pages: 512 - 515
Selective and nonselective wet etching of Zn0.9Mg0.1O/ZnO Jau-Jiun ChenSoohwan JangJ. F. Weaver OriginalPaper Pages: 516 - 519
Effect of annealing on electrical properties of radio-frequency-sputtered ZnO films Y. I. AlivovX. BoH. Morkoç OriginalPaper Pages: 520 - 524
Free carrier absorption and lattice vibrational modes in bulk ZnO P. Y. EmelieJ. D. PhillipsU. D. Venkateswaran OriginalPaper Pages: 525 - 529
Synthesis and characterization of phosphorus-doped ZnO and (Zn,Mg)O thin films via pulsed laser deposition Y. J. LiY. W. HeoD. P. Norton OriginalPaper Pages: 530 - 537
Polarization, piezoelectric constants, and elastic constants of ZnO, MgO, and CdO Priya GopalNicola A. Spaldin OriginalPaper Pages: 538 - 542
Trap-related photoconductivity in ZnO epilayers T. E. MurphyK. MoazzamiJ. D. Phillips OriginalPaper Pages: 543 - 549
Thermal conductivity of bulk ZnO after different thermal treatments Ü. ÖzgürX. GuJ. E. Nause OriginalPaper Pages: 550 - 555
Valency configuration of transition metal impurities in ZnO L. PetitT. C. SchulthessA. Janotti OriginalPaper Pages: 556 - 561
Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry David PritchettWalter HendersonW. Alan Doolittle OriginalPaper Pages: 562 - 567
Gate control, surface leakage currents, and peripheral charging in AlGaN/GaN heterostructure field effect transistors having nanometer-scale schottky gates S. KasaiJ. KotaniH. Hasegawa OriginalPaper Pages: 568 - 575
Catalyst-free growth of GaN nanowires K. A. BertnessN. A. SanfordI. Levin OriginalPaper Pages: 576 - 580
Schottky barrier formation at nonpolar Au/GaN epilayer interfaces D. E. Walker Jr.M. GaoL. J. Brillson OriginalPaper Pages: 581 - 586
Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes Wonseok LeeJae LimbRussell D. Dupuis OriginalPaper Pages: 587 - 591
Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers Kai ChengM. LeysG. Borghs OriginalPaper Pages: 592 - 598
Anisotropy in the quantum lifetime in AlGaN/GaN heterostructures S. ElhamriW. C. MitchelG. R. Landis OriginalPaper Pages: 599 - 604
Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN Katherine H. A. BogartJohn Crofton OriginalPaper Pages: 605 - 612
Giant traps on the surface of hydride vapor phase epitaxy-grown free-standing GaN Z. -Q. FangD. C. LookI. Adesida OriginalPaper Pages: 613 - 617
Extraction of SiO2/SiC interface trap profile in 4H- and 6H-SiC metal-oxide semiconductor field-effect transistors from subthreshold characteristics at 25°C and 150°C Yanqing DengWei WangT. Paul Chow OriginalPaper Pages: 618 - 624
Effect of high-temperature processing on the creation of boron-related deep levels in 4H-SiC Hrishikesh DasYaroslav KoshkaJ. L. Wyatt OriginalPaper Pages: 625 - 629
Relationship between infrared photoluminescence and resistivity in semi-insulating 6H-SiC S. K. ChandaY. KoshkaM. Yoganathan OriginalPaper Pages: 630 - 634
Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition W. Y. ShimK. A. JeonW. Y. Lee OriginalPaper Pages: 635 - 640
Growth of AlGaN alloys exhibiting enhanced luminescence efficiency A. V. SampathG. A. GarrettM. Wraback OriginalPaper Pages: 641 - 646
Electrical and optical characterization studies of lower dose Si-implanted AlxGa1−xN Mee-Yi RyuY. K. YeoT. D. Steiner OriginalPaper Pages: 647 - 653
Investigation of GaNxP1−x/GaP LED structure optical properties L. PeternaiJ. KovacB. Rheinlaender OriginalPaper Pages: 654 - 657
Annealing temperature dependence of TiB2 schottky barrier contacts on n-GaN Rohit KhannaS. J. PeartonI. Kravchenko OriginalPaper Pages: 658 - 662
Electrical properties of undoped bulk ZnO substrates A. Y. PolyakovN. B. SmirnovAmir Dabiran OriginalPaper Pages: 663 - 669
High-yield GaN nanowire synthesis and field-effect transistor fabrication Huaqiang WuHo-Young ChaGoutam Koley OriginalPaper Pages: 670 - 674
Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates T. J. AndersonF. RenM. Schimpf OriginalPaper Pages: 675 - 679
Selective dry etching of (Sc2O3)x(Ga2O3)1−x gate dielectrics and surface passivation films on GaN M. HladL. VossF. Ren OriginalPaper Pages: 680 - 684
Si-diffused GaN for enhancement-mode GaN mosfet on si applications Soohwan JangF. RenJ. Thuret OriginalPaper Pages: 685 - 690
ZnO growth on Si with low-temperature CdO and ZnO buffer layers by molecular-beam epitaxy F. X. XiuZ. YangR. C. Haddon OriginalPaper Pages: 691 - 694
Growth of InGaN HBTs by MOCVD Theodore ChungJae LimbZusanne Lilienthal-Weber OriginalPaper Pages: 695 - 700
Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots X. B. ZhangJ. H. RyouN. Holonyak Jr. OriginalPaper Pages: 701 - 704
Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices X. B. ZhangJ. H. RyouN. Holonyak Jr. OriginalPaper Pages: 705 - 710
Optoelectronic properties of expanding thermal plasma deposited textured zinc oxide: Effect of aluminum doping R. GroenenE. R. KieftM. C. M. Van de Sanden OriginalPaper Pages: 711 - 716
Photoluminescence properties of GaN with dislocations induced by plastic deformation Ichiro YonenagaHisao MakinoTakafumi Yao OriginalPaper Pages: 717 - 721
High-temperature transport properties of 2DEG in AlGaN/GaN heterostructures Y. Q. TaoD. J. ChenY. D. Zheng OriginalPaper Pages: 722 - 725
Comparison of MOS capacitors on n- and p-type GaN W. HuangT. KhanT. Paul Chow OriginalPaper Pages: 726 - 732
Band offsets analysis of dilute nitride single quantum well structures employing surface photo voltage measurements Massimo GalluppiLutz GeelhaarHenning Riechert OriginalPaper Pages: 733 - 737
Electrical transport properties of single GaN and InN nanowires Chih-Yang ChangGou-Chung ChiS. J. Pearton OriginalPaper Pages: 738 - 743
GaN/AIN multiple quantum wells grown on GaN-AIN waveguide structure by metalorganic vapor-phase epitaxy Chaiyasit KumtornkittikulMasakazu SugiyamaYoshiaki Nakano OriginalPaper Pages: 744 - 749
Optimized doping and contact scheme for low-voltage 275-nm deep ultraviolet LEDs Craig G. MoeMathew C. SchmidtDavid Emerson OriginalPaper Pages: 750 - 753
Characterization of Ti schottky diodes on epi-regrown 4H-SiC Lin ZhuCanhua LiAnant Agarwal OriginalPaper Pages: 754 - 757
Evolution of ZnO nanostructures on silicon substrate by vapor-solid mechanism: Structural and optical properties A. UmarY. H. ImY. B. Hahn OriginalPaper Pages: 758 - 765
Metalorganic chemical vapor deposition and characterization of ZnO materials Shangzu SunGary S. TompaPuneet Masaun OriginalPaper Pages: 766 - 770
Digital etching of III-N materials using a two-step Ar/KOH technique David KeoghPeter AsbeckMilton Feng OriginalPaper Pages: 771 - 776
Advances in pulsed-laser-deposited AIN thin films for high-temperature capping, device passivation, and piezoelectric-based RF MEMS/NEMS resonator applications S. S. HullavaradR. D. VisputeM. Dubey OriginalPaper Pages: 777 - 794
Selective growth and directed integration of ZnO nanobridge devices on si substrates without a metal catalyst using a ZnO seed layer John F. Conley Jr.Lisa SteckerYoshi Ono OriginalPaper Pages: 795 - 802