Large VLWIR Hg1−xCdxTe photovoltaic detectors A. I. D’SouzaL. C. DawsonG. Hildebrandt Special Issue Paper Pages: 630 - 635
Variable area MWIR diodes on HgCdTe/Si grown by molecular beam epitaxy R. AshokanN. K. DharS. Sivananthan Special Issue Paper Pages: 636 - 640
Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays P. FerretJ. P. ZanattaG. Destefanis Special Issue Paper Pages: 641 - 647
In-situ evaluation of the anodic oxide growth on Hg1−xCdxTe (MCT) using ellipsometry and second harmonic generation A. W. WarkL. E. A. BerlouisP. F. Brevet Special Issue Paper Pages: 648 - 653
Evaluation of Zn uniformity in CdZnTe substrates R. HiranoA. HichiwaT. Yamamoto Special Issue Paper Pages: 654 - 656
Enhanced diffusion and interdiffusion in HgCdTe from fermi-level effects H. G. RobinsonM. A. BerdingB. J. Walker Special Issue Paper Pages: 657 - 663
Equilibrium properties of indium and iodine in LWIR HgCdTe M. A. Berding Special Issue Paper Pages: 664 - 668
Strain relief in epitaxial HgCdTe by growth on a reticulated substrate David R. RhigerSanghamitra SenEli E. Gordon Special Issue Paper Pages: 669 - 675
Critical thickness in the HgCdTe/CdZnTe system M. A. BerdingW. D. NixA. Sher Special Issue Paper Pages: 676 - 679
HgCdZnTe quaternary materials for lattice-matched two-color detectors S. M. JohnsonJ. L. JohnsonM. D. Gorwitz Special Issue Paper Pages: 680 - 686
Misfit relaxation behavior in CdHgTe layers grown by molecular beam epitaxy on CdZnTe substrates T. SkauliT. ColinS. Løvold Special Issue Paper Pages: 687 - 690
Spectroscopic evaluation of n-type CdZnTe gamma-ray spectrometers Y. NemirovskyG. AsaA. Peyser Special Issue Paper Pages: 691 - 698
Time of flight experimental studies of CdZnTe radiation detectors J. C. EricksonH. W. YaoM. Greaves Special Issue Paper Pages: 699 - 703
Transport properties of undoped Cd0.9Zn0.1Te grown by high pressure bridgman technique Kazuhiko SuzukiS. SetoK. Imai Special Issue Paper Pages: 704 - 707
Surface passivation of cadmium zinc telluride radiation detectors by potassium hydroxide solution Kaushik ChattopadhyayMiguel HayesRalph B. James Special Issue Paper Pages: 708 - 712
The photoassisted MOVPE growth of ZnSSe using tertiary-butylmercaptan D. W. ParentA. RodriguezF. C. Jain Special Issue Paper Pages: 713 - 717
Wurtzite CdS on CdTe grown by molecular beam epitaxy P. BoieriuR. SporkenS. Sivananthan Special Issue Paper Pages: 718 - 722
ZnS-based visible-blind UV detectors: Effects of isoelectronic traps I. K. SouZ. H. MaG. K. L. Wong Special Issue Paper Pages: 723 - 726
Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B F. AqaridenH. D. ShihP. K. Liao Special Issue Paper Pages: 727 - 728
Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy Lijie ZhaoJ. S. SpeckW. Hamilton Special Issue Paper Pages: 732 - 735
Effect of dislocations on performance of LWIR HgCdTe photodiodes K. JówikowskiA. Rogalski Special Issue Paper Pages: 736 - 741
In-situ control of temperature and alloy composition of Cd1−xZnxTe grown by molecular beam epitaxy M. DaraseliaG. BrillS. Sivananthan Special Issue Paper Pages: 742 - 747
CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics N. K. DharP. R. BoydN. Goldsman Special Issue Paper Pages: 748 - 753
HgCdTe heteroepitaxy on three-inch (112) CdZnTe/Si: Ellipsometric control of substrate temperature L. A. AlmeidaN. K. DharJ. H. Dinan Special Issue Paper Pages: 754 - 759
Selective epitaxy of cadmium telluride on silicon by MBE R. SporkenD. GrajewskiS. Sivananthan Special Issue Paper Pages: 760 - 764
Selective growth of CdTe on Si and GaAs substrates using metalorganic vapor phase epitaxy R. ZhangI. Bhat Special Issue Paper Pages: 765 - 769
Impurity segregation in horizontal bridgman grown cadmium zinc telluride D. J. ReeseCs. SzelesK. A. Harris Special Issue Paper Pages: 770 - 774
Extraction of mobile impurities from CdZnTe Sanghamitra SenDavid R. RhigerPaul R. Norton Special Issue Paper Pages: 775 - 780
Composition and thickness control of thin LPE HgCdTe layers using x-ray diffraction S. P. TobinM. A. HutchinsP. W. Norton Special Issue Paper Pages: 781 - 791
Percolation problem in boron—Implanted mercury cadmium telluride N. MainzerE. Zolotoyabko Special Issue Paper Pages: 792 - 797
Precise measurements of the dispersion of the index of refraction for Cd1−xZnxTe alloys F. C. PeirisS. LeeJ. K. Furdyna Special Issue Paper Pages: 798 - 803
Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe T. T. LamC. D. MooreM. D. Gorwitz Special Issue Paper Pages: 804 - 808
Fundamental physics of infrared detector materials Michael A. Kinch Special Issue Paper Pages: 809 - 817
MCT infrafed detectors with close to radiatively limited performance at 240 K in the 3–5 µm band N. T. GordonR. S. HallA. M. White Special Issue Paper Pages: 818 - 822
A model for dark current and multiplication in HgCdTe avalanche photodiodes S. VelicuR. AshokanS. Sivananthan Special Issue Paper Pages: 823 - 827
A detailed calculation of the auger lifetime in p-type HgCdTe S. KrishnamurthyT. N. Casselman Special Issue Paper Pages: 828 - 831
Surface leakage current analysis of ion implanted ZnS-passivated n-on-p HgCdTe diodes in weak inversion Young-Ho KimSoo-Ho BaeChoong Ki Kim Special Issue Paper Pages: 832 - 836
Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion J. AntoszewskiC. A. MuscaL. Faraone Special Issue Paper Pages: 837 - 840
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology J. M. DellJ. AntoszewskiL. Faraone Special Issue Paper Pages: 841 - 848
Electron beam induced current study of ion beam milling type conversion in molecular beam epitaxy vacancy-doped CdxHg1−xTe R. HaakenaasenT. ColinL. Trosdahl-Iversen Special Issue Paper Pages: 849 - 852
H2-based dry plasma etching for mesa structuring of HgCdTe E. P. G. SmithC. A. MuscaL. Faraone Special Issue Paper Pages: 853 - 858
Characteristics of gradually doped LWIR diodes by hydrogenation Young-Ho KimTae-Sik KimChoong Ki Kim Special Issue Paper Pages: 859 - 864
TE- and TM-polarized optoelectronic properties of HgCdTe quantum wells Vinod M. MenonL. R. Ram-MohanJ. R. Meyer Special Issue Paper Pages: 865 - 868
Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe T. S. LeeJ. GarlandS. Sivananthan Special Issue Paper Pages: 869 - 872
SIMS quantification of As and In in Hg1−xCdxTe materials of different x values Larry WangLily H. Zhang Special Issue Paper Pages: 873 - 876
Analysis of 1/f noise in LWIR HgCdTe photodiodes Soo Ho BaeSang Jun LeeChoong Ki Kim Special Issue Paper Pages: 877 - 882
Molecular beam epitaxy of ZnxBe1−xSe: Influence of the substrate nature and epilayer properties C. ChauvetE. TourniéJ. P. Faurie Special Issue Paper Pages: 883 - 886
Isolation and control of voids and void-hillocks during molecular beam epitaxial growth of HgCdTe D. ChandraF. AqaridenH. D. Shih Special Issue Paper Pages: 887 - 892