On the peculiarities of galvanomagnetic effects in high magnetic fields in twisting bicrystals of the 3D topological insulator Bi1–x Sb x (0.07 ≤ x ≤ 0.2) F. M. MuntyanuE. I. GheorghitsaV. Munteanu Electronic Properties of Semiconductors 21 April 2017 Pages: 413 - 416
Modification of the thermal relaxation kinetics of the photoinduced (at T = 425 K) metastable dark conductivity of a-Si:H films by weak illumination during the initial stage of relaxation I. A. KurovaN. N. Ormont Surfaces, Interfaces, and Thin Films 21 April 2017 Pages: 417 - 419
Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe A. S. KozhukhovD. V. SheglovA. V. Latyshev Surfaces, Interfaces, and Thin Films 21 April 2017 Pages: 420 - 422
Electron mobility in the inversion layers of fully depleted SOI films E. G. ZaitsevaO. V. NaumovaB. I. Fomin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 21 April 2017 Pages: 423 - 429
Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions A. B. Pashkovskii Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 21 April 2017 Pages: 430 - 437
Alloyed Si/Al-based ohmic contacts to AlGaN/GaN nitride heterostructures D. N. SlapovskiyA. Yu. PavlovA. V. Klekovkin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 21 April 2017 Pages: 438 - 443
Quantum-well charge and voltage distribution in a metal–insulator–semiconductor structure upon resonant electron Tunneling M. I. VexlerYu. Yu. IllarionovI. V. Grekhov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 21 April 2017 Pages: 444 - 448
Electron exchange between neutral and ionized impurity iron centers in vitreous arsenic selenide A. V. MarchenkoE. I. TerukovP. P. Seregin Amorphous, Vitreous, and Organic Semiconductors 21 April 2017 Pages: 449 - 453
Specific features of ZnCdS nanoparticles synthesized in different solvents A. G. Kyazym-zadeM. A. JafarovR. S. Jafarli Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 21 April 2017 Pages: 454 - 457
Anodic processes in the chemical and electrochemical etching of Si crystals in acid-fluoride solutions: Pore formation mechanism V. P. UlinN. V. UlinF. Yu. Soldatenkov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 21 April 2017 Pages: 458 - 472
Ab initio calculations of the electron spectrum and density of states of TlFeS2 and TlFeSe2 crystals N. A. IsmayilovaH. S. OrudjevS. H. Jabarov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 21 April 2017 Pages: 473 - 476
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments G. G. ZegryaG. G. SavenkovYu. M. Mikhailov Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 21 April 2017 Pages: 477 - 482
Effect of gamma irradiation on the photoluminescence of porous silicon M. A. ElistratovaN. M. RomanovO. M. Sreseli Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 21 April 2017 Pages: 483 - 487
On the high charge-carrier mobility in polyaniline molecular channels in nanogaps between carbon nanotubes A. V. EmelianovA. V. RomashkinI. I. Bobrinetskiy Carbon Systems 21 April 2017 Pages: 488 - 491
Optical transparency of graphene layers grown on metal surfaces E. V. Rut’kovN. P. LavrovskayaN. R. Gall Carbon Systems 21 April 2017 Pages: 492 - 497
Polarization-modulation diagnostics of thermal stresses in an integrated pressure transducer I. V. MikhailenkoA. T. OrlovB. K. Serdega Physics of Semiconductor Devices 21 April 2017 Pages: 498 - 502
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates G. B. GalievS. S. PushkarevP. P. Maltsev Physics of Semiconductor Devices 21 April 2017 Pages: 503 - 508
Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation D. S. PonomarevR. A. KhabibullinR. A. Akhmedzhanov Physics of Semiconductor Devices 21 April 2017 Pages: 509 - 513
Energy spectrum and thermal properties of a terahertz quantum-cascade laser based on the resonant-phonon depopulation scheme R. A. KhabibullinN. V. ShchavrukZh. I. Alferov Physics of Semiconductor Devices 21 April 2017 Pages: 514 - 519
Optimization of vertical cavity lasers with intracavity metal layers A. A. LazarenkoK. A. IvanovM. A. Kaliteevski Physics of Semiconductor Devices 21 April 2017 Pages: 520 - 523
In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers R. R. GuseynovV. A. TanriverdiyevN. T. Mamedov Fabrication, Treatment, and Testing of Materials and Structures 21 April 2017 Pages: 524 - 530
Surface nanostructuring in the carbon–silicon(100) system upon microwave plasma treatment R. K. YafarovV. Ya. Shanygin Fabrication, Treatment, and Testing of Materials and Structures 21 April 2017 Pages: 531 - 535
Investigation of spatial distribution of photocurrent in the plane of a Si p–n photodiode with GeSi nanoislands by scanning near-field optical microscopy D. O. FilatovI. A. KazantsevaV. P. Mishkin Fabrication, Treatment, and Testing of Materials and Structures 21 April 2017 Pages: 536 - 541
Silicon nanowire array architecture for heterojunction electronics M. M. SolovanV. V. BrusS. L. Abashin Fabrication, Treatment, and Testing of Materials and Structures 21 April 2017 Pages: 542 - 548