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Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

  • Physics of Semiconductor Devices
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Abstract

The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In0.38Ga0.62As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10–5 at a rather low optical fluence of ~40 μJ/cm2, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

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Authors and Affiliations

  1. Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Nagornyi pr. 7, str. 5, Moscow, 117105, Russia

    D. S. Ponomarev, R. A. Khabibullin, A. E. Yachmenev & P. P. Maltsev

  2. National Research Nuclear University “MEPhI”, Kashirskoe sh. 31, Moscow, 115409, Russia

    M. M. Grekhov

  3. Institute of Applied Physics, Russian Academy of Sciences, ul. Ul’yanova 46, Nizhny Novgorod, 603950, Russia

    I. E. Ilyakov, B. V. Shishkin & R. A. Akhmedzhanov

Authors
  1. D. S. Ponomarev
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  2. R. A. Khabibullin
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  3. A. E. Yachmenev
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  4. P. P. Maltsev
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  5. M. M. Grekhov
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  6. I. E. Ilyakov
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  7. B. V. Shishkin
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  8. R. A. Akhmedzhanov
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Correspondence to D. S. Ponomarev.

Additional information

Original Russian Text © D.S. Ponomarev, R.A. Khabibullin, A.E. Yachmenev, P.P. Maltsev, M.M. Grekhov, I.E. Ilyakov, B.V. Shishkin, R.A. Akhmedzhanov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 4, pp. 535–539.

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Ponomarev, D.S., Khabibullin, R.A., Yachmenev, A.E. et al. Terahertz radiation in In0.38Ga0.62As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation. Semiconductors 51, 509–513 (2017). https://doi.org/10.1134/S1063782617040170

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  • DOI: https://doi.org/10.1134/S1063782617040170

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