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In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers

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Abstract

Unrelaxed InAs1–x Sb x (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs1–x Sb x alloys is established.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, Baku, AZ-1143, Azerbaijan

    R. R. Guseynov, V. A. Tanriverdiyev, Ye. N. Aliyeva, Kh. V. Aliguliyeva, N. A. Abdullayev & N. T. Mamedov

  2. Stony Brook University, Stony Brook, New York, 11794, USA

    G. Kipshidze

Authors
  1. R. R. Guseynov
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  2. V. A. Tanriverdiyev
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  3. G. Kipshidze
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  4. Ye. N. Aliyeva
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  5. Kh. V. Aliguliyeva
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  6. N. A. Abdullayev
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  7. N. T. Mamedov
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Corresponding author

Correspondence to G. Kipshidze.

Additional information

Original Russian Text © R.R. Guseynov, V.A. Tanriverdiyev, G. Kipshidze, Ye.N. Aliyeva, Kh.V. Aliguliyeva, N.A. Abdullayev, N.T. Mamedov, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 4, pp. 551–557.

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Guseynov, R.R., Tanriverdiyev, V.A., Kipshidze, G. et al. In As1–x Sb x heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers. Semiconductors 51, 524–530 (2017). https://doi.org/10.1134/S1063782617040066

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  • DOI: https://doi.org/10.1134/S1063782617040066

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