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Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Solution of the Schrödinger equation, which describes resonant transitions between three quantum levels in large-signal and high-frequency electric fields, is generalized to the case of the detuning of frequencies and energies from those exactly resonant for asymmetric three-barrier resonance-tunneling structures with thin high barriers. The dependence of the shape of the resonance levels on the amplitude and frequency of electric fields is studied. It is shown that the number of regions of absolute transparency can be as large as four depending on the microwave-field amplitude.

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References

  1. M. Butiker and R. Landauer, Phys. Rev. Lett. 49, 1739 (1982).

    Article  ADS  Google Scholar 

  2. M. Yu. Sumetskii and M. L. Fel’shtyn, JETP Lett. 53, 24 (1991).

  3. E. I. Golant and A. B. Pashkovskii, JETP Lett. 63, 590 (1996).

  4. V. F. Elesin, J. Exp. Theor. Phys. 85, 264 (1997).

    Article  ADS  Google Scholar 

  5. N. V. Tkach and Yu. A. Seti, JETP Lett. 95, 271 (2012).

  6. N. B. Delone and V. P. Krainov, Atom in Strong Light Field (Energoatomizdat, Moscow, 1984), p. 7 [in Russian].

    Google Scholar 

  7. A. B. Pashkovskii, JETP Lett. 89, 30 (2009).

  8. V. F. Elesin and Yu. V. Kopaev, J. Exp. Theor. Phys. 96, 1149 (2003).

    Article  ADS  Google Scholar 

  9. A. B. Pashkovskii, Semiconductors 45, 743 (2011).

    Article  ADS  Google Scholar 

  10. A. B. Pashkovskii, JETP Lett. 93, 559 (2011).

  11. E. I. Golant, A. B. Pashkovskii, and A. S. Tager, Tech. Phys. Lett. 20, 886 (1994).

    ADS  Google Scholar 

  12. E. I. Golant and A. B. Pashkovskii, J. Exp. Theor. Phys. 85, 130 (1997).

    Article  ADS  Google Scholar 

  13. A. F. Kazarinov and R. A. Suris, Sov. Phys. Semicond. 6, 109 (1972).

    Google Scholar 

  14. J. Faist, F. Capasso, and D. L. Sivco, Science 264, 553 (1994).

    Article  ADS  Google Scholar 

  15. S. Blaser, M. Rochat, M. Beck, and J. Faist, Phys. Rev. B 61, 8369 (2000).

    Article  ADS  Google Scholar 

  16. C. Gmachl, F. Capasso, D. L. Sivco, and A. Y. Cho, Rep. Prog. Phys. 64, 1533 (2001).

    Article  ADS  Google Scholar 

  17. M. A. Belkin, F. Capasso, F. Xie, A. Belyanin, M. Fischer, A. Wittmann, and J. Faist, Appl. Phys. Lett. 92, 201101 (2008).

    Article  ADS  Google Scholar 

  18. A. B. Pashkovskii, Elektron. Tekh., Ser. 1: SVCh Tekh. 492 (4), 17 (2007).

    Google Scholar 

  19. T. C. L. G. Sollner, D. W. Goodhue, P. E. Tahnenwald, C. D. Parker, and D. D. Peck, Appl. Phys. Lett. 43, 588 (1985).

    Article  ADS  Google Scholar 

  20. E. R. Brown, T. C. L. G. Sollner, C. D. Parker, D. W. Goodhue, and C. L. Chen, Appl. Phys. Lett. 55, 1777 (1989).

    Article  ADS  Google Scholar 

  21. V. M. Lukashin, A. B. Pashkovskii, K. S. Zhuravlev, A. I. Toropov, V. G. Lapin, E. I. Golant, and A. A. Kapralova, Semiconductors 48, 666 (2014).

    Article  ADS  Google Scholar 

  22. A. B. Pashkovskii, JETP Lett. 73, 617 (2001).

  23. I. A. Obukhov, Nonequilibrium Effects in Electron Devices (Veber, Moscow, 2010), p. 104 [in Russian].

    Google Scholar 

  24. I. I. Abramov, Nano-Mikrosist. Tekh. 109 (8), 7 (2009).

    Google Scholar 

  25. V. M. Galitskii, B. M. Karnakov, and V. I. Kogan, Problems on Quantum Mechanics (Nauka, Moscow, 1981), p. 150 [in Russian].

    Google Scholar 

  26. E. I. Golant and A. B. Pashkovskii, Theor. Math. Phys. 120, 1094 (1999).

    Article  Google Scholar 

Download references

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Authors and Affiliations

  1. Shokin Joint-Stock Company ISTOK Research and Production Corporation, Fryazino Moscow region, 141195, Russia

    A. B. Pashkovskii

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  1. A. B. Pashkovskii
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Correspondence to A. B. Pashkovskii.

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Original Russian Text © A.B. Pashkovskii, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 4, pp. 453–460.

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Pashkovskii, A.B. Dynamics of electron scattering in absolutely transparent channels in three-barrier structures in the case of two-photon transitions. Semiconductors 51, 430–437 (2017). https://doi.org/10.1134/S1063782617040169

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  • DOI: https://doi.org/10.1134/S1063782617040169

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