Abstract
A technique for reversible surface modification with an atomic-force-microscope (AFM) probe is suggested. In this method, no significant mechanical or topographic changes occur upon a local variation in the surface potential of a sample under the AFM probe. The method allows a controlled relative change in the ohmic resistance of a channel in a Hall bridge within the range 20–25%.
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Original Russian Text © A.S. Kozhukhov, D.V. Sheglov, A.V. Latyshev, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 4, pp. 443–445.
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Kozhukhov, A.S., Sheglov, D.V. & Latyshev, A.V. Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe. Semiconductors 51, 420–422 (2017). https://doi.org/10.1134/S1063782617040091
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DOI: https://doi.org/10.1134/S1063782617040091