1. Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

   • A. Sh. Abdinov
   • R. F. Babayeva
   • R. M. Rzayev

   Electronic Properties of Semiconductors 07 August 2013 Pages: 1013 - 1017

2. Optical properties of oxygen-implanted CdS:O layers in terms of band anticrossing theory

   • N. K. Morozova
   • A. A. Kanakhin
   • V. G. Galstyan

   Spectroscopy, Interaction with Radiation 07 August 2013 Pages: 1018 - 1025

3. Study of the effect of the acid-base surface properties of ZnO, Fe₂O₃ and ZnFe₂O₄ oxides on their gas sensitivity to ethanol vapor

   • S. S. Karpova
   • V. A. Moshnikov
   • N. E. Kazantseva

   Surfaces, Interfaces, and Thin Films 07 August 2013 Pages: 1026 - 1030

4. Features of the stress-strain state of Si/SiO₂/Ge heterostructures with germanium nanoislands of a limited density

   • V. V. Kuryliuk
   • O. A. Korotchenkov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 August 2013 Pages: 1031 - 1036

5. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties

   • A. D. Bouravleuv
   • V. N. Nevedomskii
   • V. M. Ustinov

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 August 2013 Pages: 1037 - 1040

6. Photoelectric and luminescence properties of GaSb-Based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy

   • M. P. Mikhailova
   • I. A. Andreev
   • Y. Pangrac

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 August 2013 Pages: 1041 - 1045

7. Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix

   • V. I. Ushanov
   • V. V. Chaldyshev
   • B. R. Semyagin

   Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 07 August 2013 Pages: 1046 - 1050

8. X-ray and synchrotron studies of porous silicon

   • V. N. Sivkov
   • A. A. Lomov
   • O. V. Petrova

   Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors 07 August 2013 Pages: 1051 - 1057

9. Copolymers of carbazole- and indolocarbazole-containing phenylquinolines as new materials for electroluminescent devices

   • E. L. Aleksandrova
   • V. M. Svetlichnyi
   • V. V. Kudryavtsev

   Carbon Systems 07 August 2013 Pages: 1058 - 1067

10. Transient processes in high-voltage silicon carbide bipolar-junction transistors

    • V. S. Yuferev
    • M. E. Levinshtein
    • J. W. Palmour

    Physics of Semiconductor Devices 07 August 2013 Pages: 1068 - 1074

11. 850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

    • D. A. Vinokurov
    • A. V. Lyutetskiy
    • I. S. Tarasov

    Physics of Semiconductor Devices 07 August 2013 Pages: 1075 - 1078

12. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide

    • S. O. Slipchenko
    • A. A. Podoskin
    • I. S. Tarasov

    Physics of Semiconductor Devices 07 August 2013 Pages: 1079 - 1083

13. Electrical phenomena in a metal/nanooxide/p ⁺-silicon structure during its transformation to a resonant-tunneling diode

    • G. G. Kareva
    • M. I. Vexler

    Physics of Semiconductor Devices 07 August 2013 Pages: 1084 - 1089

14. Study of the properties of solar cells based on a-Si:H p-i-n structures by admittance spectroscopy

    • A. S. Gudovskikh
    • A. S. Abramov
    • E. I. Terukov

    Physics of Semiconductor Devices 07 August 2013 Pages: 1090 - 1096

15. Optimization of the design and mode of operation of a QD laser for reducing the heat-to-bitrate ratio

    • A. E. Zhukov
    • A. V. Savelyev
    • V. V. Korenev

    Physics of Semiconductor Devices 07 August 2013 Pages: 1097 - 1102

16. High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz

    • I. A. Andreev
    • O. Yu. Serebrennikova
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices 07 August 2013 Pages: 1103 - 1109

17. Features of defect formation during the growth of double heterostructures for injection lasers based on Al _x Ga_{1 − x} As _y Sb_{1 − y} /GaSb materials

    • G. F. Kuznetsov

    Fabrication, Treatment, and Testing of Materials and Structures 07 August 2013 Pages: 1110 - 1115

18. Changes induced in a ZnS:Cr-based electroluminescent waveguide structure by intrinsic near-infrared laser radiation

    • N. A. Vlasenko
    • P. F. Oleksenko
    • L. I. Veligura

    Fabrication, Treatment, and Testing of Materials and Structures 07 August 2013 Pages: 1116 - 1122

19. Prospects for the pulsed electrodeposition of zinc-oxide hierarchical nanostructures

    • N. P. Klochko
    • Y. O. Myagchenko
    • A. V. Kopach

    Fabrication, Treatment, and Testing of Materials and Structures 07 August 2013 Pages: 1123 - 1129

20. Effect of annealing in argon on the properties of thermally deposited gallium-oxide films

    • V. M. Kalygina
    • V. V. Vishnikina
    • T. M. Yaskevich

    Fabrication, Treatment, and Testing of Materials and Structures 07 August 2013 Pages: 1130 - 1136

21. Effect of annealing on the nonequilibrium carrier lifetime in GaAs grown at low temperatures

    • A. A. Pastor
    • U. V. Prokhorova
    • M. A. Yagovkina

    Fabrication, Treatment, and Testing of Materials and Structures 07 August 2013 Pages: 1137 - 1140