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Features of defect formation during the growth of double heterostructures for injection lasers based on Al x Ga1 − x As y Sb1 − y /GaSb materials

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Abstract

A lack of lattice defects and, in particular, a lack of dislocations in the active layer in complex multilayer heteroepitaxial systems is the basic condition for the efficient and reliable operation of optoelectronic microdevices. Minimum elastic stresses in multilayer heteroepitaxial systems and their lack in the active layer at that elevated temperature that occurs in an efficiently operating electronic device is the second necessary condition for its long-term operation.

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Authors and Affiliations

  1. Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141190, Russia

    G. F. Kuznetsov

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  1. G. F. Kuznetsov
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Correspondence to G. F. Kuznetsov.

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Original Russian Text © G.F. Kuznetsov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 8, pp. 1116–1121.

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Kuznetsov, G.F. Features of defect formation during the growth of double heterostructures for injection lasers based on Al x Ga1 − x As y Sb1 − y /GaSb materials. Semiconductors 47, 1110–1115 (2013). https://doi.org/10.1134/S1063782613080125

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  • DOI: https://doi.org/10.1134/S1063782613080125

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