Abstract
Self-assembled (In,Mn)As quantum dots are synthesized by molecular-beam epitaxy on GaAs (001) substrates. The experimental results obtained by transmission electron microscopy show that doping of the central part of the quantum dots with Mn does not bring about the formation of structural defects. The optical properties of the samples, including those in external magnetic fields, are studied.
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Original Russian Text © A.D. Bouravleuv, V.N. Nevedomskii, E.V. Ubyivovk, V.F. Sapega, A.I. Khrebtov, Yu.B. Samsonenko, G.E. Cirlin, V.M. Ustinov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 8, pp. 1033–1036.
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Bouravleuv, A.D., Nevedomskii, V.N., Ubyivovk, E.V. et al. (In,Mn)As quantum dots: Molecular-beam epitaxy and optical properties. Semiconductors 47, 1037–1040 (2013). https://doi.org/10.1134/S1063782613080058
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DOI: https://doi.org/10.1134/S1063782613080058