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Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals

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Abstract

In the temperature range T = 77-600 K, the dependence of the charge-carrier mobility (μ) on the initial dark resistivity is experimentally investigated at 77 K (ρd 0), as well as on the temperature and the level (N) of rare-earth doping with such elements as gadolinium (Gd), holmium (Ho), and dysprosium (Dy) in n-type indium-monoselenide (InSe) crystals. It is established that the anomalous behavior of the dependences μ(T), μ(ρd 0), and μ(N) found from the viewpoint of the theory of charge-carrier mobility in crystalline semiconductors is related, first of all, to partial disorder in indium-monoselenide crystals and can be attributed to the presence of random drift barriers in the free energy bands.

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Authors and Affiliations

  1. Baku State University, Az-1148, Baku, Azerbaijan

    A. Sh. Abdinov, S. I. Amirova & R. M. Rzayev

  2. Azerbaijan State Economic University, Az-1145, Baku, Azerbaijan

    R. F. Babayeva

Authors
  1. A. Sh. Abdinov
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  2. R. F. Babayeva
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  3. S. I. Amirova
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  4. R. M. Rzayev
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Corresponding author

Correspondence to A. Sh. Abdinov.

Additional information

Original Russian Text © A.Sh. Abdinov, R.F. Babayeva, S.I. Amirova, R.M. Rzayev, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 8, pp. 1009–1013.

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Abdinov, A.S., Babayeva, R.F., Amirova, S.I. et al. Effect of temperature and rare-earth doping on charge-carrier mobility in indium-monoselenide crystals. Semiconductors 47, 1013–1017 (2013). https://doi.org/10.1134/S1063782613080022

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  • DOI: https://doi.org/10.1134/S1063782613080022

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