Abstract
High-speed p-i-n photodiodes for the spectral range of 1.2–2.4 μm are fabricated for the first time based on a GaAs/GaInAsSb/GaAlAsSb heterostructure with separated sensitive-(50 μm in diameter) and contact mesas, which are connected by a bridge front contact. The use of an unconventional design for the contact mesa with a Si3N4 insulating sublayer 0.3 μm thick under the metal contact made it possible to lower both the intrinsic photodiode capacitance and the reverse dark currents. The photodiodes have a low intrinsic capacitance of 3–5 pF at zero bias and 0.8–1.5 pF at a reverse bias of 3.0 V. The photodiode operating speed, which is determined by the time of increasing the photoresponse pulse to a level of 0.1–0.9, is 50–100 ps. The transmission band of the photodiodes reaches 2–5 GHz. The photodiodes are characterized by low reverse dark currents I d = 200–1500 nA with a reverse bias of U = −(0.5–3.0) V, a high current monochromatic sensitivity of R i = 1.10–1.15 A/W, and a detectability of D*(λmax, 1000, 1) = 0.9 × 1011 W−1 cm Hz1/2 at wavelengths of 2.0–2.2 μm.
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Original Russian Text © I.A. Andreev, O.Yu. Serebrennikova, G.S. Sokolovskii, V.V. Dudelev, N.D. Ilynskaya, G.G. Konovalov, E.V. Kunitsyna, Yu.P. Yakovlev, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 8, pp. 1109–1115.
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Andreev, I.A., Serebrennikova, O.Y., Sokolovskii, G.S. et al. High-speed photodiodes for the mid-infrared spectral region 1.2–2.4 μm based on GaSb/GaInAsSb/GaAlAsSb heterostructures with a transmission band of 2–5 GHz. Semiconductors 47, 1103–1109 (2013). https://doi.org/10.1134/S1063782613080046
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DOI: https://doi.org/10.1134/S1063782613080046