Abstract
Approaches to the development of laser heterostructures with a broadened single-mode waveguide are studied theoretically and experimentally. It is shown that the use of n- and p-type emitters with different refractive-index values ensures lasing in the fundamental mode only, if the thickness of the waveguide layer is 2 μm. The studied semiconductor lasers fabricated using the developed heterostructure feature internal optical losses amounting to 0.6 cm−1; the divergence in the plane perpendicular to the p-n junction is 23°. In the continuous lasing mode at room temperature, a linear power-current characteristic is obtained at an output optical power as high as 7 W.
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Original Russian Text © S.O. Slipchenko, A.A. Podoskin, D.A. Vinokurov, A.D. Bondarev, V.A. Kapitonov, N.A. Pikhtin, P.S. Kop’ev, I.S. Tarasov, 2013, published in Fizika i Tekhnika Poluprovodnikov, 2013, Vol. 47, No. 8, pp. 1082–1086.
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Slipchenko, S.O., Podoskin, A.A., Vinokurov, D.A. et al. AlGaAs/GaAs diode lasers (1020–1100 nm) with an asymmetric broadened single transverse mode waveguide. Semiconductors 47, 1079–1083 (2013). https://doi.org/10.1134/S1063782613080186
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DOI: https://doi.org/10.1134/S1063782613080186