Abstract
Mid-wavelength infrared HgCdTe avalanche photodiodes (APDs) are becoming increasingly significant in research and practical applications for the high linear gain, low excess noise and high quantum efficiency. However, the performance of HgCdTe APDs is largely limited by the voltage dependence of dark current. It has been well known that the tunneling current is the main component of the dark current of the p-i-n diode. However, the current contribution of different physical mechanism still needs to be indicated in different reverse voltages. In this paper, we mainly study the mechanism of the relationship between dark current and reverse voltage of mid-wavelength infrared \({\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}}\) (x = 0.3) mesa p-i-n avalanche diode. Several physical models are used for the dark current numerical simulation. The results show that for detection of \({\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}}\) mesa p-i-n detector under low temperature, dark current is mainly caused by tunneling current. With the reverse voltage increasing, the main component of dark current turns from trap-assisted tunneling current to direct band-to-band tunneling. The transition voltage is positively related to the energy level difference between trap energy level and conduction band. The results may provide a guideline to improve the performance of the mid-wavelength infrared APD detector by ranking the importance of different structural parameters.
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Abautret, J., Perez, J.P., Evirgen, A., Martinez, F., Christol, P., Fleury, J., Sik, H., Cluzel, R., Ferron, A., Rothman, J.: Electrical modeling of InSb PiN photodiode for avalanche operation. J. Appl. Phys. 113(18), 183716 (2013)
Ailiang, C., Lingfeng, L., Changhong, S., Ruijun, D., Li, H., Zhenhua, Y.: Analysis of dark current generated by long-wave infrared HgCdTe photodiodes with different implantation shapes. Infrared Phys. Technol. 103, 103036 (2019)
Assefa, S., Xia, F., Vlasov, Y.A.: Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature 464(7285), 80–84 (2010)
Chen, X., Ye, Z., Zhang, J., Yin, F., Chun Lin, Z., Wei, L.: Accurate simulation of temperature-dependent dark current in hgcdte infrared detectors assisted by analytical modeling. J. Electron. Mater. 39, 981–985 (2010)
Cheng, Y., Chen, L., Guo, H., Lin, C., He, L.: Improved local field model for HgCdTe electron avalanche photodiode. Infrared Phys. Technol. 101, 156–161 (2019)
Ferron, A., Rothman, J., Gravrand, O.: Modeling of dark current in HgCdTe infrared detectors. J. Electron. Mater. 42(11), 3303–3308 (2013)
Gopal, V., Xie, X.-h., Liao, Q.-j., Xiao-ning, H.: Analytical modelling of carrier transport mechanisms in long wavelength planar n + –p HgCdTe photovoltaic detectors. Infrared Phys. Technol. 64, 56–61 (2014)
Haran, T.L., Christopher James, J., Lane, S.E., Cincotta, T.E.: Quantum efficiency and spatial noise tradeoffs for III–V focal plane arrays. Infrared Phys. Technol. 97, 309–318 (2019)
He, J., Li, Q., Wang, P., Wang, F., Gu, Y., Shen, C., Luo, M., Yu, C., Chen, L., Chen, X., Lu, W., Hu, W.: Design of a bandgap-engineered barrier-blocking HOT HgCdTe long-wavelength infrared avalanche photodiode. Opt. Exp. 28(22), 33556–33563 (2020)
Hu, W., Ye, Z., Liao, L., Chen, H., Chen, L., Ding, R., He, L., Chen, X., Lu, W.: 128 x 128 long-wavelength/mid-wavelength two-color HgCdTe infrared focal plane array detector with ultralow spectral cross talk. Opt. Lett. 39(17), 5184–5187 (2014)
Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Syvorotka, I.I., Fitsych, O.I., Varavin, V.S., Dvoretsky, S.A., Mikhailov, N.N., Remesnik, V.G., Yakushev, M.V., Swiatek, Z., Morgiel, J., Yu Bonchyk, O., Savytskyy, H.V.: Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis. Infrared Phys. Technol. 98, 230–235 (2019)
Kinch, M.A., Chandra, D., Schaake, H., Shih, H.D., Aqariden, F.: Arsenic-doped mid-wavelength infrared HgCdTe photodiodes. J. Electron. Mater. 33, 590–595 (2004)
Kocer, H., Arslan, Y., Besikci, C.: Numerical analysis of long wavelength infrared HgCdTe photodiodes. Infrared Phys. Technol. 55(1), 49–55 (2012)
Kopytko, M., Jóźwikowski, K., Martyniuk, P., Rogalski, A.: Photon recycling effect in small pixel p-i-n HgCdTe long wavelength infrared photodiodes. Infrared Phys. Technol. 97, 38–42 (2019)
Lei, W., Gu, R.J., Antoszewski, J., Dell, J., Neusser, G., Sieger, M., Mizaikoff, B., Faraone, L.: MBE growth of mid-wave Infrared HgCdTe layers on GaSb alternative substrates. J. Electron. Mater. 44(9), 3180–3187 (2015a)
Lei, W., Antoszewski, J., Faraone, L.: Progress, challenges, and opportunities for HgCdTe infrared materials and detectors. Appl. Phys. Rev. 2(4), 041303 (2015b)
Li, Y., Weida, H., Ye, Z., Chen, Y., Chen, X., Wei, L.: Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays. Opt. Lett. 42(7), 1325–1328 (2017)
Li, Q., He, J., Weida, H., Chen, L., Chen, X., Wei, L.: Influencing sources for dark current transport and avalanche mechanisms in planar and mesa HgCdTe p-i-n electron-avalanche photodiodes. IEEE Trans. Electron Dev. 65(2), 572–576 (2018)
Li, Q., Wang, F., Wang, P., Zhang, L., Jiale He, L., Chen, P.M., Rogalski, A., Chen, X., Wei, L., Weida, H.: Enhanced performance of HgCdTe midwavelength infrared electron avalanche photodetectors with guard ring designs. IEEE Trans. Electron Dev. 67(2), 542–546 (2020)
Ma, Y., Zhang, Y., Yi, G., Xingyou Chen, S.P., Xi, B.D., Li, H.: Tailoring the performances of low operating voltage InAlAs/InGaAs avalanche photodetectors. Opt. Exp. 23(15), 19278–19287 (2015)
Mallick, S., Banerjee, K., Velicu, S., Grein, C., Ghosh, S., Zhao, J.: Avalanche mechanism in p + -n − -n + and p + -n mid-wavelength infrared Hg1 − xCdxTe diodes on si substrates. J. Electron. Mater. 37(9), 1488–1496 (2008)
Martyniuk, P., Antoszewski, J., Martyniuk, M., Faraone, L., Rogalski, A.: New concepts in infrared photodetector designs. Appl. Phys. Rev. 1(4), 041102 (2014)
Pan, W.W., Zhang, Z.K., Lei, W., Liu, Z., Faraone, L.: A Raman spectroscopy study of MBE-grown Hg1 − xCdxSe alloys grown on GaSb (2 1 1) by molecular beam epitaxy. Infrared Phys. Technol. 97, 365–370 (2019)
Qiu, W., Weida, H., Lin, C., Chen, X., Wei, L.: Surface leakage current in 12.5 & #x03BC;m long-wavelength HgCdTe infrared photodiode arrays. Opt. Lett. 41(4), 828–831 (2016)
Rogalski, A.: Infrared detectors: an overview. Infrared Phys. Technol. 43(3), 187–210 (2002)
Rogalski, A.: Recent progress in infrared detector technologies. Infrared Phys. Technol. 54(3), 136–154 (2011)
Rothman, J., Gwladys Perrais, P., Ballet, L.M., Gout, S., Chamonal, J.: Latest developments of HgCdTe e-APDs at CEA LETI-Minatec. J. Electron. Mater. 37(9), 1303–1310 (2008)
Sallin, D., Koukab, A., Kayal, M.: Toward direct light-to-digital conversion using a pulse-driven hybrid MOS-PN photodetector. Opt. Lett. 40(4), 669–672 (2015)
Shin, D., Feihu, X., Venkatraman, D., Lussana, R., Villa, F., Zappa, F., Goyal, V.K., Wong, Franco N.C., Shapiro, J.H.: Photon-efficient imaging with a single-photon camera. Nat. Commun. 7(1), 12046 (2016)
Srivastav, V., Rituparna Pal, B., Sharma, A., Naik, D.S., Rawal, V.G., Vyas, H.: Etching of mesa structures in HgCdTe. J. Electron. Mater. 34, 1440–1445 (2005)
Sun, T.-P., Yi-Chuan, L., Shieh, H.-L.: A novel readout integrated circuit with a dual-mode design for single and dual-band infrared focal plane array. Infrared Phys. Technol. 60, 56–65 (2013)
Tan, Y.C., Chandrasekara, R., Cheng, C., Ling, A.: Silicon avalanche photodiode operation and lifetime analysis for small satellites. Opt. Exp. 21(14), 16946–16954 (2013)
Uzgur, F., Kocaman, S.: Barrier engineering for HgCdTe unipolar detectors on alternative substrates. Infrared Phys. Technol. 97, 123–128 (2019)
Wang, H., Hong, J., Yue, F., Jing, C., Chu, J.: Optical homogeneity analysis of Hg1 − xCdxTe epitaxial layers: how to circumvent the influence of impurity absorption bands? Infrared Phys. Technol. 82, 1–7 (2017)
Wang, X., Li, Q., Zhou, S., Lin, C.: Study of dark current for LWIR HgCdTe detectors with a graded doped junction. Infrared Phys. Technol. 92, 358–362 (2018)
Funding
The authors acknowledge the support provided by the National Key R&D Program of China (Grant Nos. 2017YFA0205800 and 2018YFA0306200), the National Natural Science Foundation of China (Grant Nos. 61874126, 61875218, and 61705249), the Youth Innovation Promotion Association CAS (Grant No. 2017285), the Key Research Project of Frontier Science of CAS (Grant No. QYZDJSSW-JSC007), the Strategic Priority Research Program of Chinese Academy of Sciences (XDB43010200), the Shanghai Rising-Star Program (Grant No. 20QA1410400), the Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01), and Shanghai Science and Technology Commission (Grant Nos. 18JC1420400 and 20JC1416000).
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Chen, B., Li, Q., Chen, J. et al. Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode. Opt Quant Electron 53, 16 (2021). https://doi.org/10.1007/s11082-020-02668-z
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DOI: https://doi.org/10.1007/s11082-020-02668-z