Abstract
Mesa structures were etched in HgCdTe using different Br2/HBr/Ethylene glycol (EG) formulations. Etch rate and degree of anisotropy (A) were studied in detail for all of the combinations. Addition of EG to the conventional etchant gave A>0.5, with controllable etch rates. Optimum etchant composition was determined to be 2% Br2 in a 3:1 mixture of EG:HBr. This composition resulted in a good anisotropy factor of ∼0.6 and a reasonably optimum etch rate of ∼2.5 µm/min, with rms surface roughness of ∼2 nm. Kinetics of the etching reaction have also been studied for the optimum etchant concentration and an etching mechanism has been proposed.
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Srivastav, V., Pal, R., Sharma, B.L. et al. Etching of mesa structures in HgCdTe. J. Electron. Mater. 34, 1440–1445 (2005). https://doi.org/10.1007/s11664-005-0203-5
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DOI: https://doi.org/10.1007/s11664-005-0203-5