Abstract
The recently developed Te-rich, liquid-phase-epitaxy growth technology for low arsenic-doped mid-wavelength infrared (MWIR) HgCdTe with p-type doping concentrations <1015 cm−3 has enabled the fabrication of n+/p photodiodes using the damage associated with a boron ion implantation. The diode properties are presented and compared to similar diodes fabricated in p-HgCdTe doped with Group IBs. The attraction of the arsenic-doped diode technology is associated with the fact that the arsenic resides on the Te sublattice and is immune to the Hg interstitial fluxes that are present in the diode-formation process. This leads to minimal diode spread, limited primarily to the n+ region and, hence, a potential for use in really high-density infrared focal planes. At the same time, the Hg interstitials generated in the diode-formation process should purge the photodiode volume of fast diffusing species, resulting in a high-quality, diode-depletion region devoid of many Shockley-Read recombination centers. These aspects of diode formation in this material are discussed.
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Kinch, M.A., Chandra, D., Schaake, H.F. et al. Arsenic-doped mid-wavelength infrared HgCdTe photodiodes. J. Electron. Mater. 33, 590–595 (2004). https://doi.org/10.1007/s11664-004-0051-8
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DOI: https://doi.org/10.1007/s11664-004-0051-8