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Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling

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Abstract

Resistance–voltage curves of n +-on-p Hg1−x Cd x Te infrared photodiodes were measured in the temperature range of 60 K to 120 K. Characteristics obtained experimentally were fitted by an improved simultaneous-mode nonlinear fitting process. Based on the extracted parameters, an efficient numerical sim- ulation approach has been developed by inserting trap-assisted and band-to-band tunneling models into continuity equations as generation–recombination processes. Simulated dark-current characteristics were found to be in good agreement with the experimental data, demonstrating the validity of the nonlinear fitting process. Our work presents an efficient method for dark-current simulations over a wide range of temperatures and bias voltages, which is important for investigating mechanisms of carrier transport across the HgCdTe junction.

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Acknowledgements

This work was supported in part by National Natural Science Foundation of China (10725418, 10734090, 10990104, 60706012, 60976092, and 60811120169), the Aviation Science Fund (20080190001), and the Applied Materials Shanghai Research & Development Fund (08520740600).

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Authors and Affiliations

  1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Weida Hu, Xiaoshuang Chen, Zhenhua Ye, Fei Yin, Chun Lin, Zhifeng Li & Wei Lu

  2. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, 6009, Australia

    Jing Zhang

Authors
  1. Weida Hu
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  2. Xiaoshuang Chen
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  3. Zhenhua Ye
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  4. Jing Zhang
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  5. Fei Yin
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  6. Chun Lin
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  7. Zhifeng Li
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  8. Wei Lu
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Correspondence to Weida Hu or Xiaoshuang Chen.

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Hu, W., Chen, X., Ye, Z. et al. Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling. J. Electron. Mater. 39, 981–985 (2010). https://doi.org/10.1007/s11664-010-1121-8

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  • DOI: https://doi.org/10.1007/s11664-010-1121-8

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