1. Space-charge-limited current in Cu_xS/CdS solar cells

   • L. D. Partain
   • G. A. Armantrout
   • Peter Warter

   OriginalPaper Pages: 467 - 484

2. Defect analysis of (Hg_0.6 Cd_0.4)_1-y Te_y

   • R. F. Brebrick
   • J. P. Schwartz

   OriginalPaper Pages: 485 - 497

3. Cathodoluminescence studies of the 1.4 eV bands in vapor-phape-grown CdTe

   • C. B. Norris

   OriginalPaper Pages: 499 - 512

4. Chemical conversion of C₂ F₆ and uniformity of etching SiO₂ in a radial flow plasma reactor

   • Thomas M. Mayer

   OriginalPaper Pages: 513 - 523

5. Auger analysis of the PbS-Si heterojunction

   • H. Elabd
   • A. J. Steckl

   OriginalPaper Pages: 525 - 549

6. A comparison of measurement techniques for determining phosphorus densities in semiconductor silicon

   • W. Robert Thurber

   OriginalPaper Pages: 551 - 560

7. Compositional dependence of the electron mobility in In_l-x Ga_x As_y P_1-y

   • R. F. Leheny
   • A. A. Ballman
   • M. A. Pollack

   OriginalPaper Pages: 561 - 568

8. Etching characteristics of SiO₂ in CHF₃ gas plasma

   • H. Toyoda
   • H. Komiya
   • H. Itakura

   OriginalPaper Pages: 569 - 584

9. Deposition of thin refractory MIS structures on InP

   • A. Christou
   • W. T. Anderson

   OriginalPaper Pages: 585 - 600

10. The preparation of Ga_l-x In_x As by organometallic pyrolysis for homojunction LED’S

    • J. P. Noad
    • A. J. SpringThorpe

    OriginalPaper Pages: 601 - 620

11. Characterization of GaAs layers grown on polycrystalline GaAs by LPE and current controlled LPE

    • A. Abul-Fadl
    • E. Stefanakos
    • J. McPherson

    OriginalPaper Pages: 621 - 638

12. Annealing of radiation-induced positive charge in MOS devices with aluminum and polysilicon gate contacts

    • J. M. Aitken

    OriginalPaper Pages: 639 - 650

13. Liquid crystal alignment films produced by the R.F. Plasma beam technique

    • G. J. Sprokel

    OriginalPaper Pages: 651 - 667

14. The formation of ß SiC on Si

    • M. Balog
    • A. Reisman
    • M. Berkenblit

    OriginalPaper Pages: 669 - 683

15. The effects of ion implantation and pulsed electron beam anneal on Ge films grown epitaxially on ◃100▹ GaAs

    • W. Tseng
    • H. Dietrich
    • W. T. Anderson

    OriginalPaper Pages: 685 - 692