Abstract
Phosphorus densities in semiconductor silicon slices cut from 14 single crystal ingots have been determined by two electrical and two analytical techniques. Hall effect measurements were made on specimens from all ingots, and junction capacitance-voltage measurements were made on specimens with densities up to about 5 × 1017 cm−3. Neutron activation analysis was used to measure phosphorus densities from 5 × 1015} to 5 x 1019} cm−3, and a photometric technique was used for densities greater than 1017 cm−3. A systematic discrepancy of about 15% between the photometric and neutron activation data is indicative of the interlaboratory agreement that might be realized in practice with these techniques.
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This work was conducted as part of the Semiconductor Technology Program at NBS and was supported by the Defense Advanced Research Projects Agency (Order 2397). Not subject to copyright.
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Thurber, W.R. A comparison of measurement techniques for determining phosphorus densities in semiconductor silicon. J. Electron. Mater. 9, 551–560 (1980). https://doi.org/10.1007/BF02652935
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DOI: https://doi.org/10.1007/BF02652935