Abstract
In the present investigation, we report on significant increases in the refractory-InP Schottky barrier by process modification of the metal-semiconductor interface. Refractory-InP MIS structures were investigated as pos-sible gate metallizations. These structures consisted of Ta/Ta2}O5}/InP and TiW/TiO2} /InP. A thin layer of Ta (100å) was electron beam vapor aeposited followed by the in situ formation of Ta2}O5} at 300‡C and an oxygen overpressure.
The remainder of the Ta film was deposited at 90‡C substrate temperature. The TiW/TiO2} system was formed by sputter deposition of Ti (100Aℴ), in situ oxidation to form TiO2} followed by deposition of TiW (88 wt % W, 12 wt % Ti). Effective barrier height for the TiW/TiO /InP structure was measured to be 0.65 eV and for the Ta/Ta2}O2} /InP, 0.5 eV. Leakage current at-5V was less than 3 A/cm2} for both refractory-InP MIS structures. The TiW/TiO2} /InP structure was stable up to 400-450°C, while the Ta/Ta2 O5/InP system degraded to 0.2 eV at 300-350‡C.
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References
J.S. Barrera and R.J. Archer, IEEE Trans.ED-22, 1023–1030 (1975).
R.J. Archer and J. Cohen, "Control of thin-film interface barriers," AFAL Technical Report, AFAL-TR-70-256, Dec. 1970.
J.J. Caldwell and R.F. Peart, Electron. Lett.9, 88–89 (1973).
O. Wada and A. Majerfeld, Electron. Lett.14, 125 (1978).
G.G. Roberts and K.P. Pande, J. Phys. D: Appl. Phys. Vol. 10, 1323 (1977).
A. Christou and W. Anderson, Solid State Electron.22, 857 (1979).
H.B. Kim, A.F. Lovas, G.G. Sweeney, and T.M.S. Heng, 6th Int ’l Symp. on GaAs and Related Compounds, St. Louis, Sept. 26-29, 1976.
J. Massies and N.T. Linh, 5th Annual Conf. on the Physics of Compound Semiconductor Interfaces, Los Angeles, Jan. 17–20, 1978.
J.J. Coleman, Appl. Phys. Lett.31, 283 (1977).
H.D. Rees, 1974 Metal-Semiconductor Contacts: Inst. Phys. Conf. Ser. No. 22, 105 (1974).
R.F.C. Farrow, J. Phys. D, Appl. Phys.10, L135 (1977).
B.L. Smith, J. Phys.D6, 1358 (1973).
A. Christou, G. Nelson, W. Jenkins, J.E. Davey, W. Wilkins, SEM/1978/Vol. 1, 273 (1978).
B.R. Pruniaux and A.C. Adams, J. Appl. Phys.43, 1980 (1972).
R.B. Childs, J.M. Ruths, T.E. Sullivan and S.J. Fonash, 5th Annual Conf. on Physics of Compound Semi. Interfaces, L.A. Jan 17–20, 1978.
A.M. Cowley and S.M. Sze, J. Appl. Phys.36, 3212 (1965).
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Presented at the Electronic Materials Conference at Boulder, CO, June 27-29, 1979.
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Christou, A., Anderson, W.T. Deposition of thin refractory MIS structures on InP. J. Electron. Mater. 9, 585–600 (1980). https://doi.org/10.1007/BF02652938
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DOI: https://doi.org/10.1007/BF02652938