Abstract
It is the purpose of this paper to investigate the suitability and effectiveness of growth of thin GaAs layers on polycrystalline GaAs substrates by liquid phase epitaxy (LPE) and current controlled LPE (CCLPE). During each growth run LPE and CCLPE were used to grow thin GaAs layers on two large-grain polycrystalline GaAs substrates cut from the same wafer and simultaneously placed in the same growth system. The grain boundary was exposed by cleaving the samples perpendicular to the grain boundary. Notnarski contrast, SEM, C-V and Hall measurements were performed in order to determine the surface morphology, discontinuity of epilayer at the grain boundary, epilayer thickness unform-ity, resistivity (in directions parallel and perpendicular to the grain boundary), and dopant concentration. The CCLPE system was carefully designed so that growth would take place only by electrotransport in the absence of convection or Peltier cooling. The results indicate that CCLPE yields layers with improved surface morphology and thickness uniformity as compared to those grown by LPE. In some samples the epilayer was discontinuous at certain grain boundaries. Results are presented on CCLPE growth rate dependence upon grain orientation, current density, and continuity of the epilayer at the grain boundary.
Similar content being viewed by others
References
H. Kressel and H. Nelson, Physics of Thin Films, Vol. 7 G. Hass, M. Francombe, and R. Hoffman, Eds. Academic Press, N.Y. (1973).
L. Jastrzebski, J. Lagowski, H. C. Gatos and A. F. Witt, J. Appl. Phys.49 5909, (1979).
E. K. Stefanakos, A. Abul-Fadl and M. D. Workman, J. Appl. Phys.46, 3002 (1975).
A. Abul-Fadl, and E. K. Stefanakos, J. Appl. Phys.47, 4627 (1976).
S. G. Epstein and A. Paskin, Phys. Letters24A, 309, (1967).
M. Kumagawa, A. F. Witt, M. Lichtensteiger, and H. C. Gatos, J. Electrochem. Soc.120,(1973).
D. J. Lawrence and L. F. Eastman, J. Cryst. Growth30, 267 (1975).
D. J. Lawrence and L. F. Eastman, J. Electron. Mater.6, 1 (1976).
L. Jastrzebski, U. Imamura and H. C. Gatos, J. Electrochem. Soc.123, 1121 (1976).
L. Jastrzebski, U. Imamura and H. C. Gatos, J. Electrochem. Soc.125, 1140 (1978).
Y. Imamura, L. Jastrzebski and H. C. Gatos, J. Electrochem. Soc.125, 1561 (1978).
A. Abul-Fadl and E. K. Stefanakos, J. Cryst. Growth39, 341 (1977).
J. J. Daniele, Appl. Phys. Lett.27, 373 (1975).
J. J. Daniele, D. A. Cammack, and P. M. Asbeck, J. Appl. Phys.48, 914 (1977).
J. J. Daniele, J. Electrochem. Soc.124, 1143 (1977).
J. J. Daniele and C. Michel, Inst. Phys. Cont. Ser.24, 155 (1974).
J. J. Hsieh, J. Cryst. Growth27 49 (1974).
B. L. Mattes and R. K. Route, J. Cryst. Growth27, 133 (1974).
D. L. Rode, W. R. Wagner and N. E. Schumaker, Appl. Phys. Lett.30, 75 (1977).
Morgan Semiconductor, Inc. 2625 National Circle, Garland, Texas 75041.
S. I. Long, J. Ballantyne and L. F. Eastman, J. Cryst. Growth32 95 (1976).
D. L. Rode, J. Cryst. Growth20, 13 (1973).
I Crossley and M. B. Small, J. Cryst. Growth11, 157 (1971).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Abul-Fadl, A., Stefanakos, E., Nance, W. et al. Characterization of GaAs layers grown on polycrystalline GaAs by LPE and current controlled LPE. J. Electron. Mater. 9, 621–638 (1980). https://doi.org/10.1007/BF02652940
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02652940